Effect of anodic oxidation voltage and superconductivity on the electrical properties of the metal / p-Si / SiO2 device
Abstract<br /> A device of metal-oxide –semiconductor (MOS) structure fabricated from p-Si of )100( direction by tow electrodes anodic oxidation system using HCl aqueous solution at oxidation voltage 0.5,1.0,1.5,2.0) Volt. From C-V measurements the results of the samples show clear and differe...
| Main Authors: | , |
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| Format: | Article |
| Language: | Arabic |
| Published: |
College of Education for Pure Sciences
2010-12-01
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| Series: | مجلة التربية والعلم |
| Subjects: | |
| Online Access: | https://edusj.mosuljournals.com/article_58456_cd49bdec952865e3b33c44db31123c75.pdf |