Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic Waveguides
Under the dimension of 6 µm overall length, a 220 nm partial parabolic taper fabricated on silicon-on-insulator (SOI) wafer with 2 µm buried oxide at 1.55 µm, to simply fabrication processes and reduce cost, we design a Partial parabolic single layer crossing, which...
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/9718139/ |
| _version_ | 1818441805342965760 |
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| author | Yuan-Ting Shih Kuo-Fang Chung Ding-Wei Huang |
| author_facet | Yuan-Ting Shih Kuo-Fang Chung Ding-Wei Huang |
| author_sort | Yuan-Ting Shih |
| collection | DOAJ |
| description | Under the dimension of 6 µm overall length, a 220 nm partial parabolic taper fabricated on silicon-on-insulator (SOI) wafer with 2 µm buried oxide at 1.55 µm, to simply fabrication processes and reduce cost, we design a Partial parabolic single layer crossing, which modifies crossing curves around the crossing regions and input-output regions of crossing for fitting the initial input status of the fundamental mode. This single layer crossing for SOI photonic wires which are broadened using a 3 µm partial parabolic taper in each arm to get 97.8% high transmission (−0.097 dB) and −62 dB low crosstalk. It not only can simplify the fabrication processes, reduce cost, and shrink device size to produce more compact photonic circuits, but also keep high transmission over 96.8% even under ±10 nm fabrication dimension variation. |
| first_indexed | 2024-12-14T18:34:05Z |
| format | Article |
| id | doaj.art-68184a22e8b74122a924209d6702f747 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-14T18:34:05Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-68184a22e8b74122a924209d6702f7472022-12-21T22:51:41ZengIEEEIEEE Photonics Journal1943-06552022-01-011421610.1109/JPHOT.2022.31529239718139Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic WaveguidesYuan-Ting Shih0https://orcid.org/0000-0002-6580-3838Kuo-Fang Chung1Ding-Wei Huang2https://orcid.org/0000-0001-5992-2139Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, TaiwanGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, TaiwanDepartment of Electrical Engineering and the Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, TaiwanUnder the dimension of 6 µm overall length, a 220 nm partial parabolic taper fabricated on silicon-on-insulator (SOI) wafer with 2 µm buried oxide at 1.55 µm, to simply fabrication processes and reduce cost, we design a Partial parabolic single layer crossing, which modifies crossing curves around the crossing regions and input-output regions of crossing for fitting the initial input status of the fundamental mode. This single layer crossing for SOI photonic wires which are broadened using a 3 µm partial parabolic taper in each arm to get 97.8% high transmission (−0.097 dB) and −62 dB low crosstalk. It not only can simplify the fabrication processes, reduce cost, and shrink device size to produce more compact photonic circuits, but also keep high transmission over 96.8% even under ±10 nm fabrication dimension variation.https://ieeexplore.ieee.org/document/9718139/Integrated nanophotonicwaveguide devices |
| spellingShingle | Yuan-Ting Shih Kuo-Fang Chung Ding-Wei Huang Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic Waveguides IEEE Photonics Journal Integrated nanophotonic waveguide devices |
| title | Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic Waveguides |
| title_full | Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic Waveguides |
| title_fullStr | Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic Waveguides |
| title_full_unstemmed | Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic Waveguides |
| title_short | Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic Waveguides |
| title_sort | partial parabolic single layer crossing for silicon on insulator nanophotonic waveguides |
| topic | Integrated nanophotonic waveguide devices |
| url | https://ieeexplore.ieee.org/document/9718139/ |
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