Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic Waveguides
Under the dimension of 6 µm overall length, a 220 nm partial parabolic taper fabricated on silicon-on-insulator (SOI) wafer with 2 µm buried oxide at 1.55 µm, to simply fabrication processes and reduce cost, we design a Partial parabolic single layer crossing, which...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9718139/ |