Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time
The effect of different growth interruption time on the surface morphology and optical properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated. The surface becomes rougher and the photoluminescence intensity has been enhanced significantly when employing the growth...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2019-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab5be0 |
| _version_ | 1797747145761095680 |
|---|---|
| author | Yangfeng Li Zijing Jin Yu Han Chunyu Zhao Jie Huang Chak Wah Tang Jiannong Wang Kei May Lau |
| author_facet | Yangfeng Li Zijing Jin Yu Han Chunyu Zhao Jie Huang Chak Wah Tang Jiannong Wang Kei May Lau |
| author_sort | Yangfeng Li |
| collection | DOAJ |
| description | The effect of different growth interruption time on the surface morphology and optical properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated. The surface becomes rougher and the photoluminescence intensity has been enhanced significantly when employing the growth interruption method. Temperature-dependent photoluminescence and excitation power-dependent photoluminescence both present unchanged peak energy and line-width of QDs. The sharp increase of PL intensity in medium temperature regime is attributed to the fingerprint of the existence of InGaN QDs. The shape of the QDs are further confirmed by the transmission electron microscopy with a size of 3 nm by 4 nm. Among the samples, a growth interruption time of 30 s gives the best optical performance. |
| first_indexed | 2024-03-12T15:46:59Z |
| format | Article |
| id | doaj.art-68261742b013488492a1e96c306db704 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:46:59Z |
| publishDate | 2019-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-68261742b013488492a1e96c306db7042023-08-09T15:22:11ZengIOP PublishingMaterials Research Express2053-15912019-01-017101590310.1088/2053-1591/ab5be0Surface morphology and optical properties of InGaN quantum dots with varying growth interruption timeYangfeng Li0https://orcid.org/0000-0001-9896-9116Zijing Jin1Yu Han2https://orcid.org/0000-0002-0177-5639Chunyu Zhao3Jie Huang4Chak Wah Tang5Jiannong Wang6Kei May Lau7Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong KongDepartment of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong KongDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong KongDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong; Department of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong KongDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong KongDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong KongDepartment of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong KongDepartment of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong KongThe effect of different growth interruption time on the surface morphology and optical properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated. The surface becomes rougher and the photoluminescence intensity has been enhanced significantly when employing the growth interruption method. Temperature-dependent photoluminescence and excitation power-dependent photoluminescence both present unchanged peak energy and line-width of QDs. The sharp increase of PL intensity in medium temperature regime is attributed to the fingerprint of the existence of InGaN QDs. The shape of the QDs are further confirmed by the transmission electron microscopy with a size of 3 nm by 4 nm. Among the samples, a growth interruption time of 30 s gives the best optical performance.https://doi.org/10.1088/2053-1591/ab5be0InGaN QDsAFMTDPLexcitation power-dependent PLTEM |
| spellingShingle | Yangfeng Li Zijing Jin Yu Han Chunyu Zhao Jie Huang Chak Wah Tang Jiannong Wang Kei May Lau Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time Materials Research Express InGaN QDs AFM TDPL excitation power-dependent PL TEM |
| title | Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time |
| title_full | Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time |
| title_fullStr | Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time |
| title_full_unstemmed | Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time |
| title_short | Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time |
| title_sort | surface morphology and optical properties of ingan quantum dots with varying growth interruption time |
| topic | InGaN QDs AFM TDPL excitation power-dependent PL TEM |
| url | https://doi.org/10.1088/2053-1591/ab5be0 |
| work_keys_str_mv | AT yangfengli surfacemorphologyandopticalpropertiesofinganquantumdotswithvaryinggrowthinterruptiontime AT zijingjin surfacemorphologyandopticalpropertiesofinganquantumdotswithvaryinggrowthinterruptiontime AT yuhan surfacemorphologyandopticalpropertiesofinganquantumdotswithvaryinggrowthinterruptiontime AT chunyuzhao surfacemorphologyandopticalpropertiesofinganquantumdotswithvaryinggrowthinterruptiontime AT jiehuang surfacemorphologyandopticalpropertiesofinganquantumdotswithvaryinggrowthinterruptiontime AT chakwahtang surfacemorphologyandopticalpropertiesofinganquantumdotswithvaryinggrowthinterruptiontime AT jiannongwang surfacemorphologyandopticalpropertiesofinganquantumdotswithvaryinggrowthinterruptiontime AT keimaylau surfacemorphologyandopticalpropertiesofinganquantumdotswithvaryinggrowthinterruptiontime |