Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

The effect of different growth interruption time on the surface morphology and optical properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated. The surface becomes rougher and the photoluminescence intensity has been enhanced significantly when employing the growth...

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Bibliographic Details
Main Authors: Yangfeng Li, Zijing Jin, Yu Han, Chunyu Zhao, Jie Huang, Chak Wah Tang, Jiannong Wang, Kei May Lau
Format: Article
Language:English
Published: IOP Publishing 2019-01-01
Series:Materials Research Express
Subjects:
InGaN QDs
AFM
TDPL
excitation power-dependent PL
TEM
Online Access:https://doi.org/10.1088/2053-1591/ab5be0

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