Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner
Thermal management is a critical task for highly integrated or high-power semiconductor devices. Low dimensional materials including graphene and single-layer hexagonal boron nitride (BN) are attractive candidates for this task because of their high thermal conductivity, semi-conductivity and other...
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MDPI AG
2022-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/22/4057 |
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| author | Huibin Sun Yunlei Jiang Renjie Hua Runhua Huang Lei Shi Yuan Dong Suxia Liang Jing Ni Chi Zhang Ruoyu Dong Yingru Song |
| author_facet | Huibin Sun Yunlei Jiang Renjie Hua Runhua Huang Lei Shi Yuan Dong Suxia Liang Jing Ni Chi Zhang Ruoyu Dong Yingru Song |
| author_sort | Huibin Sun |
| collection | DOAJ |
| description | Thermal management is a critical task for highly integrated or high-power semiconductor devices. Low dimensional materials including graphene and single-layer hexagonal boron nitride (BN) are attractive candidates for this task because of their high thermal conductivity, semi-conductivity and other excellent physical properties. The similarities in crystal structure and chemistry between graphene and boron nitride provide the possibility of constructing graphene/BN heterostructures bearing unique functions. In this paper, we investigated the interfacial thermal transport properties of graphene/BN nanosheets via non-equilibrium molecular dynamics (NEMD) simulations. We observed a significant thermal rectification behavior of these graphene/BN nanosheets, and the rectification ratio increased with the system length increases up to 117%. This phenomenon is attributed to the mismatch of out-of-plane phonon vibration modes in two directions at the interface. In addition, we explored the underlying mechanism of the length dependence of the thermal transport properties. The results show promise for the thermal management of this two-dimensional heterostructure in an actively tunable manner. |
| first_indexed | 2024-03-09T18:05:59Z |
| format | Article |
| id | doaj.art-6833088105fa43f890be3bceb0682eae |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T18:05:59Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-6833088105fa43f890be3bceb0682eae2023-11-24T09:28:58ZengMDPI AGNanomaterials2079-49912022-11-011222405710.3390/nano12224057Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable MannerHuibin Sun0Yunlei Jiang1Renjie Hua2Runhua Huang3Lei Shi4Yuan Dong5Suxia Liang6Jing Ni7Chi Zhang8Ruoyu Dong9Yingru Song10School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, ChinaClimate School, Columbia University, New York, NY 10027, USAHangzhou Zhongneng Photoeletricity Technology Co., Ltd., Hangzhou 310018, ChinaSchool of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, ChinaSchool of Astronautics, Beihang University, Beijing 102206, ChinaDepartment of Mechanical Engineering, William Marsh Rice University, Houston, TX 77005, USAThermal management is a critical task for highly integrated or high-power semiconductor devices. Low dimensional materials including graphene and single-layer hexagonal boron nitride (BN) are attractive candidates for this task because of their high thermal conductivity, semi-conductivity and other excellent physical properties. The similarities in crystal structure and chemistry between graphene and boron nitride provide the possibility of constructing graphene/BN heterostructures bearing unique functions. In this paper, we investigated the interfacial thermal transport properties of graphene/BN nanosheets via non-equilibrium molecular dynamics (NEMD) simulations. We observed a significant thermal rectification behavior of these graphene/BN nanosheets, and the rectification ratio increased with the system length increases up to 117%. This phenomenon is attributed to the mismatch of out-of-plane phonon vibration modes in two directions at the interface. In addition, we explored the underlying mechanism of the length dependence of the thermal transport properties. The results show promise for the thermal management of this two-dimensional heterostructure in an actively tunable manner.https://www.mdpi.com/2079-4991/12/22/4057thermal managementgraphenehexagonal boron nitrideNEMDheterostructure |
| spellingShingle | Huibin Sun Yunlei Jiang Renjie Hua Runhua Huang Lei Shi Yuan Dong Suxia Liang Jing Ni Chi Zhang Ruoyu Dong Yingru Song Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner Nanomaterials thermal management graphene hexagonal boron nitride NEMD heterostructure |
| title | Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner |
| title_full | Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner |
| title_fullStr | Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner |
| title_full_unstemmed | Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner |
| title_short | Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner |
| title_sort | graphene and 2d hexagonal boron nitride heterostructure for thermal management in actively tunable manner |
| topic | thermal management graphene hexagonal boron nitride NEMD heterostructure |
| url | https://www.mdpi.com/2079-4991/12/22/4057 |
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