Influence of magnetism on vertical hopping transport in CrSBr
We investigate the c-direction conduction in CrSBr in the linear regime, which is not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity, which is 10^{8}−10^{11} times larger than in the a and b directions, exhibits magnetic stat...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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American Physical Society
2024-02-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.6.013185 |
| _version_ | 1797210234920370176 |
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| author | Xiaohanwen Lin Fan Wu Sara A. López-Paz Fabian O. von Rohr Marco Gibertini Ignacio Gutiérrez-Lezama Alberto F. Morpurgo |
| author_facet | Xiaohanwen Lin Fan Wu Sara A. López-Paz Fabian O. von Rohr Marco Gibertini Ignacio Gutiérrez-Lezama Alberto F. Morpurgo |
| author_sort | Xiaohanwen Lin |
| collection | DOAJ |
| description | We investigate the c-direction conduction in CrSBr in the linear regime, which is not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity, which is 10^{8}−10^{11} times larger than in the a and b directions, exhibits magnetic state dependent thermally activated and variable range hopping transport. In the spin-flip phase at 2 T, the activation energy is 20 meV lower than in the antiferromagnetic state due to a downshift of the conduction band edge, in agreement with ab initio calculations. In the variable range hopping regime, the average hopping length decreases from twice the interlayer distance to the interlayer distance at 2 T because in the antiferromagnetic state the large exchange energy impedes electrons hopping between adjacent layers. Our work demonstrates that the linear transport regime provides new information about electronic processes in vdW magnetic semiconductors and shows how magnetism influences these processes both in real and reciprocal space. |
| first_indexed | 2024-04-24T10:07:22Z |
| format | Article |
| id | doaj.art-68456197880d44c1a0213a3a29401b1c |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:07:22Z |
| publishDate | 2024-02-01 |
| publisher | American Physical Society |
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| series | Physical Review Research |
| spelling | doaj.art-68456197880d44c1a0213a3a29401b1c2024-04-12T17:39:18ZengAmerican Physical SocietyPhysical Review Research2643-15642024-02-016101318510.1103/PhysRevResearch.6.013185Influence of magnetism on vertical hopping transport in CrSBrXiaohanwen LinFan WuSara A. López-PazFabian O. von RohrMarco GibertiniIgnacio Gutiérrez-LezamaAlberto F. MorpurgoWe investigate the c-direction conduction in CrSBr in the linear regime, which is not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity, which is 10^{8}−10^{11} times larger than in the a and b directions, exhibits magnetic state dependent thermally activated and variable range hopping transport. In the spin-flip phase at 2 T, the activation energy is 20 meV lower than in the antiferromagnetic state due to a downshift of the conduction band edge, in agreement with ab initio calculations. In the variable range hopping regime, the average hopping length decreases from twice the interlayer distance to the interlayer distance at 2 T because in the antiferromagnetic state the large exchange energy impedes electrons hopping between adjacent layers. Our work demonstrates that the linear transport regime provides new information about electronic processes in vdW magnetic semiconductors and shows how magnetism influences these processes both in real and reciprocal space.http://doi.org/10.1103/PhysRevResearch.6.013185 |
| spellingShingle | Xiaohanwen Lin Fan Wu Sara A. López-Paz Fabian O. von Rohr Marco Gibertini Ignacio Gutiérrez-Lezama Alberto F. Morpurgo Influence of magnetism on vertical hopping transport in CrSBr Physical Review Research |
| title | Influence of magnetism on vertical hopping transport in CrSBr |
| title_full | Influence of magnetism on vertical hopping transport in CrSBr |
| title_fullStr | Influence of magnetism on vertical hopping transport in CrSBr |
| title_full_unstemmed | Influence of magnetism on vertical hopping transport in CrSBr |
| title_short | Influence of magnetism on vertical hopping transport in CrSBr |
| title_sort | influence of magnetism on vertical hopping transport in crsbr |
| url | http://doi.org/10.1103/PhysRevResearch.6.013185 |
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