Numerical Simulation of 30% Efficient Lead-Free Perovskite CsSnGeI<sub>3</sub>-Based Solar Cells
A cesium tin–germanium triiodide (CsSnGeI<sub>3</sub>) perovskite-based solar cell (PSC) has been reported to achieve a high-power-conversion efficiency (<i>PCE</i> > 7%) and extreme air stability. A thorough understanding of the role of the interfaces in the perovskite so...
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MDPI AG
2022-04-01
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| Online Access: | https://www.mdpi.com/1996-1944/15/9/3229 |
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| author | Hussein Sabbah |
| author_facet | Hussein Sabbah |
| author_sort | Hussein Sabbah |
| collection | DOAJ |
| description | A cesium tin–germanium triiodide (CsSnGeI<sub>3</sub>) perovskite-based solar cell (PSC) has been reported to achieve a high-power-conversion efficiency (<i>PCE</i> > 7%) and extreme air stability. A thorough understanding of the role of the interfaces in the perovskite solar cell, along with the optimization of different parameters, is still required for further improvement in <i>PCE</i>. In this study, lead-free CsSnGeI<sub>3</sub> PSC has been quantitatively analyzed using a solar cell capacitance simulator (SCAPS–1D). Five electron transport layers (ETL) were comparatively studied, while keeping other layers fixed. The use of SnO<sub>2</sub> as an ETL, which has the best band alignment with the perovskite layer, can increase the power conversion efficiency (<i>PCE</i>) of PSC by up to 30%. The defect density and thickness of the absorber layer has been thoroughly investigated. Results show that the device efficiency is highly governed by the defect density of the absorber layer. All the PSCs with a different ETL exhibit <i>PCE</i> exceeding 20% when the defect density of the absorber layer is in the range of 10<sup>14</sup> cm<sup>−3</sup>–10<sup>16</sup> cm<sup>−3</sup>, and degrade dramatically at higher values. With the optimized structure, the simulation found the highest <i>PCE</i> of CsSnGeI<sub>3</sub>-based PSCs to be 30.98%, with an open circuit voltage (<i>V<sub>oc</sub></i>) of 1.22 V, short-circuit current density (<i>J<sub>sc</sub></i>) of 28.18 mA·cm<sup>−2</sup>, and fill factor (<i>FF</i>) of 89.52%. Our unprecedented results clearly demonstrate that CsSnGeI<sub>3</sub>-based PSC is an excellent candidate to become the most efficient single-junction solar cell technology soon. |
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| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T03:58:28Z |
| publishDate | 2022-04-01 |
| publisher | MDPI AG |
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| series | Materials |
| spelling | doaj.art-684aa5282ab94f5da19167d345b4474e2023-11-23T08:40:10ZengMDPI AGMaterials1996-19442022-04-01159322910.3390/ma15093229Numerical Simulation of 30% Efficient Lead-Free Perovskite CsSnGeI<sub>3</sub>-Based Solar CellsHussein Sabbah0College of Engineering and Technology, American University of the Middle East, KuwaitA cesium tin–germanium triiodide (CsSnGeI<sub>3</sub>) perovskite-based solar cell (PSC) has been reported to achieve a high-power-conversion efficiency (<i>PCE</i> > 7%) and extreme air stability. A thorough understanding of the role of the interfaces in the perovskite solar cell, along with the optimization of different parameters, is still required for further improvement in <i>PCE</i>. In this study, lead-free CsSnGeI<sub>3</sub> PSC has been quantitatively analyzed using a solar cell capacitance simulator (SCAPS–1D). Five electron transport layers (ETL) were comparatively studied, while keeping other layers fixed. The use of SnO<sub>2</sub> as an ETL, which has the best band alignment with the perovskite layer, can increase the power conversion efficiency (<i>PCE</i>) of PSC by up to 30%. The defect density and thickness of the absorber layer has been thoroughly investigated. Results show that the device efficiency is highly governed by the defect density of the absorber layer. All the PSCs with a different ETL exhibit <i>PCE</i> exceeding 20% when the defect density of the absorber layer is in the range of 10<sup>14</sup> cm<sup>−3</sup>–10<sup>16</sup> cm<sup>−3</sup>, and degrade dramatically at higher values. With the optimized structure, the simulation found the highest <i>PCE</i> of CsSnGeI<sub>3</sub>-based PSCs to be 30.98%, with an open circuit voltage (<i>V<sub>oc</sub></i>) of 1.22 V, short-circuit current density (<i>J<sub>sc</sub></i>) of 28.18 mA·cm<sup>−2</sup>, and fill factor (<i>FF</i>) of 89.52%. Our unprecedented results clearly demonstrate that CsSnGeI<sub>3</sub>-based PSC is an excellent candidate to become the most efficient single-junction solar cell technology soon.https://www.mdpi.com/1996-1944/15/9/3229solar cellphotovoltaicsthin filmsSCAPS simulationlead-free perovskitepower conversion efficiency |
| spellingShingle | Hussein Sabbah Numerical Simulation of 30% Efficient Lead-Free Perovskite CsSnGeI<sub>3</sub>-Based Solar Cells Materials solar cell photovoltaics thin films SCAPS simulation lead-free perovskite power conversion efficiency |
| title | Numerical Simulation of 30% Efficient Lead-Free Perovskite CsSnGeI<sub>3</sub>-Based Solar Cells |
| title_full | Numerical Simulation of 30% Efficient Lead-Free Perovskite CsSnGeI<sub>3</sub>-Based Solar Cells |
| title_fullStr | Numerical Simulation of 30% Efficient Lead-Free Perovskite CsSnGeI<sub>3</sub>-Based Solar Cells |
| title_full_unstemmed | Numerical Simulation of 30% Efficient Lead-Free Perovskite CsSnGeI<sub>3</sub>-Based Solar Cells |
| title_short | Numerical Simulation of 30% Efficient Lead-Free Perovskite CsSnGeI<sub>3</sub>-Based Solar Cells |
| title_sort | numerical simulation of 30 efficient lead free perovskite cssngei sub 3 sub based solar cells |
| topic | solar cell photovoltaics thin films SCAPS simulation lead-free perovskite power conversion efficiency |
| url | https://www.mdpi.com/1996-1944/15/9/3229 |
| work_keys_str_mv | AT husseinsabbah numericalsimulationof30efficientleadfreeperovskitecssngeisub3subbasedsolarcells |