Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure
Recently hybrid graphene and hexagonal boron nitride (C-BN) nanostructures receive much research interest due to the complementary electronic properties. Graphene is a zero-gap semiconductor, while hexagonal boron nitride (h-BN) is a wide gap semiconductor. Here we studied the electronic structures...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2012-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4745599 |
| _version_ | 1828942013893967872 |
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| author | Jia-Tao Sun Andrew Thye Shen Wee Yuan Ping Feng |
| author_facet | Jia-Tao Sun Andrew Thye Shen Wee Yuan Ping Feng |
| author_sort | Jia-Tao Sun |
| collection | DOAJ |
| description | Recently hybrid
graphene and hexagonal boron nitride (C-BN) nanostructures receive much research interest due to the complementary electronic properties. Graphene is a zero-gap semiconductor, while hexagonal boron nitride (h-BN) is a wide gap semiconductor. Here we studied the electronic structures and carrier transport of hybrid C-BN nanostructures by using first principles calculations and deformation potential theory. We have found that the physical quantities in these systems under study, band gap, effective mass, deformation potential, and carrier mobility, can be categorised into three different families depending on the width of graphene nanoribbon. This family behavior is similar to pristine armchair graphene nanoribbon, but with slight difference from the individual component. New opportunities of designing nanoelectric devices are discussed by utilizing the quantum confinement effect based on such kind of hybrid nanostructures. |
| first_indexed | 2024-12-14T03:47:15Z |
| format | Article |
| id | doaj.art-684e2ef872524e2f83d4eb36ee438b7d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-14T03:47:15Z |
| publishDate | 2012-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-684e2ef872524e2f83d4eb36ee438b7d2022-12-21T23:18:19ZengAIP Publishing LLCAIP Advances2158-32262012-09-0123032133032133-610.1063/1.4745599033203ADVTheoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructureJia-Tao Sun0Andrew Thye Shen Wee1Yuan Ping Feng2Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, SingaporeDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, SingaporeDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, SingaporeRecently hybrid graphene and hexagonal boron nitride (C-BN) nanostructures receive much research interest due to the complementary electronic properties. Graphene is a zero-gap semiconductor, while hexagonal boron nitride (h-BN) is a wide gap semiconductor. Here we studied the electronic structures and carrier transport of hybrid C-BN nanostructures by using first principles calculations and deformation potential theory. We have found that the physical quantities in these systems under study, band gap, effective mass, deformation potential, and carrier mobility, can be categorised into three different families depending on the width of graphene nanoribbon. This family behavior is similar to pristine armchair graphene nanoribbon, but with slight difference from the individual component. New opportunities of designing nanoelectric devices are discussed by utilizing the quantum confinement effect based on such kind of hybrid nanostructures.http://dx.doi.org/10.1063/1.4745599 |
| spellingShingle | Jia-Tao Sun Andrew Thye Shen Wee Yuan Ping Feng Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure AIP Advances |
| title | Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure |
| title_full | Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure |
| title_fullStr | Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure |
| title_full_unstemmed | Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure |
| title_short | Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure |
| title_sort | theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure |
| url | http://dx.doi.org/10.1063/1.4745599 |
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