Modeling and Investigation of Rear-Passivated Ultrathin CIGS Solar Cell
In this paper, we use numerical simulations to investigate ultrathin Cu (In<sub>1−x</sub>Ga<sub>x</sub>) Se<sub>2</sub> solar cells. In the first part, we focus on the cell configuration in which the PV parameters fit and match the fabricated cell characteristics....
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/3/758 |
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| author | Nour El I. Boukortt Salvatore Patanè Mabrouk Adouane |
| author_facet | Nour El I. Boukortt Salvatore Patanè Mabrouk Adouane |
| author_sort | Nour El I. Boukortt |
| collection | DOAJ |
| description | In this paper, we use numerical simulations to investigate ultrathin Cu (In<sub>1−x</sub>Ga<sub>x</sub>) Se<sub>2</sub> solar cells. In the first part, we focus on the cell configuration in which the PV parameters fit and match the fabricated cell characteristics. Our goal is to investigate the impact of different loss mechanisms, such as interface trap density (D<sub>it</sub>) and absorber trap density (N<sub>t</sub>), in different cell pitch sizes on cell performances. D<sub>it</sub> defines the number of carrier traps at CIGS/Al<sub>2</sub>O<sub>3</sub> interfaces to recombine with photogenerated carriers. N<sub>t</sub> defines the number of carrier traps in the absorber layer. Recombination through traps has been found to be the primary loss process in the investigated cell. Additional numerical simulations reveal appreciable gains in cell performance for various cell pitch sizes, absorber doping densities, Ga content, and graded bandgap under AM1.5 illumination. Research during the recent decade has clarified that the most promising strategy to achieve maximum efficiency consists of the so-called tandem configuration. Therefore, we here propose a u-CIGS/PERT silicon device employing, as a top cell, a u-CIGS cell optimized to take into account the above procedure. The results of these simulations provide insights into the optimization of ultrathin-film CIGS solar cells. |
| first_indexed | 2024-03-11T09:46:55Z |
| format | Article |
| id | doaj.art-685daf7f91f842bda41ba9614a119f58 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-11T09:46:55Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-685daf7f91f842bda41ba9614a119f582023-11-16T16:31:03ZengMDPI AGElectronics2079-92922023-02-0112375810.3390/electronics12030758Modeling and Investigation of Rear-Passivated Ultrathin CIGS Solar CellNour El I. Boukortt0Salvatore Patanè1Mabrouk Adouane2Electronics and Communication Engineering Department, Kuwait College of Science and Technology, Road N. 7, Doha 13113, KuwaitDepartment of Mathematics and Computer Science, Physics and Earth Science (MIFT), University of Messina, Viale F. Stagno d’Alcontres, 31, 98166 Messina, ItalyEnergy and Building Research Center, Kuwait Institute for Scientific Research (KISR), Safat 13109, KuwaitIn this paper, we use numerical simulations to investigate ultrathin Cu (In<sub>1−x</sub>Ga<sub>x</sub>) Se<sub>2</sub> solar cells. In the first part, we focus on the cell configuration in which the PV parameters fit and match the fabricated cell characteristics. Our goal is to investigate the impact of different loss mechanisms, such as interface trap density (D<sub>it</sub>) and absorber trap density (N<sub>t</sub>), in different cell pitch sizes on cell performances. D<sub>it</sub> defines the number of carrier traps at CIGS/Al<sub>2</sub>O<sub>3</sub> interfaces to recombine with photogenerated carriers. N<sub>t</sub> defines the number of carrier traps in the absorber layer. Recombination through traps has been found to be the primary loss process in the investigated cell. Additional numerical simulations reveal appreciable gains in cell performance for various cell pitch sizes, absorber doping densities, Ga content, and graded bandgap under AM1.5 illumination. Research during the recent decade has clarified that the most promising strategy to achieve maximum efficiency consists of the so-called tandem configuration. Therefore, we here propose a u-CIGS/PERT silicon device employing, as a top cell, a u-CIGS cell optimized to take into account the above procedure. The results of these simulations provide insights into the optimization of ultrathin-film CIGS solar cells.https://www.mdpi.com/2079-9292/12/3/758thin filmtrapsultrathin CIGSPERT silicondevice optimization |
| spellingShingle | Nour El I. Boukortt Salvatore Patanè Mabrouk Adouane Modeling and Investigation of Rear-Passivated Ultrathin CIGS Solar Cell Electronics thin film traps ultrathin CIGS PERT silicon device optimization |
| title | Modeling and Investigation of Rear-Passivated Ultrathin CIGS Solar Cell |
| title_full | Modeling and Investigation of Rear-Passivated Ultrathin CIGS Solar Cell |
| title_fullStr | Modeling and Investigation of Rear-Passivated Ultrathin CIGS Solar Cell |
| title_full_unstemmed | Modeling and Investigation of Rear-Passivated Ultrathin CIGS Solar Cell |
| title_short | Modeling and Investigation of Rear-Passivated Ultrathin CIGS Solar Cell |
| title_sort | modeling and investigation of rear passivated ultrathin cigs solar cell |
| topic | thin film traps ultrathin CIGS PERT silicon device optimization |
| url | https://www.mdpi.com/2079-9292/12/3/758 |
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