Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene

Graphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles...

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Main Authors: Alexander K. Fedotov, Sergey L. Prishchepa, Alexander S. Fedotov, Vladzislaw E. Gumennik, Ivan V. Komissarov, Artem O. Konakov, Svetlana A. Vorobyova, Andrei A. Kharchenko, Oleg A. Ivashkevich
Format: Article
Language:English
Published: Pensoft Publishers 2019-12-01
Series:Modern Electronic Materials
Online Access:https://moem.pensoft.net/article/52068/download/pdf/
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author Alexander K. Fedotov
Sergey L. Prishchepa
Alexander S. Fedotov
Vladzislaw E. Gumennik
Ivan V. Komissarov
Artem O. Konakov
Svetlana A. Vorobyova
Andrei A. Kharchenko
Oleg A. Ivashkevich
author_facet Alexander K. Fedotov
Sergey L. Prishchepa
Alexander S. Fedotov
Vladzislaw E. Gumennik
Ivan V. Komissarov
Artem O. Konakov
Svetlana A. Vorobyova
Andrei A. Kharchenko
Oleg A. Ivashkevich
author_sort Alexander K. Fedotov
collection DOAJ
description Graphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles forming Ohmic contacts with graphene layers. We have compared layer resistivity as a function of temperature and magnetic field R□(T, B) for as-synthesized and decorated twisted graphene on silicon oxide substrates. Experiments have proven the existence of negative (induction < 1 Tl) and positive (induction > 1 Tl) contributions to magnetoresistance in both specimen types. The R□(T, B) functions have been analyzed based on the theory of 2D quantum interference corrections to Drude conductivity taking into account competition of hopping conductivity mechanism. We show that for the experimental temperature range (2–300 K) and magnetic field range (up to 8 Tl), carrier transport description in test graphene requires taking into account at least three interference contributions to conductivity, i.e., from weak localization, intervalley scattering and pseudospin chirality, as well as graphene buckling induced by thermal fluctuations.
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spelling doaj.art-687ac82450734e55ad07e5a68ad1f4942023-09-02T18:30:08ZengPensoft PublishersModern Electronic Materials2452-17792019-12-015416517310.3897/j.moem.5.4.5206852068Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD grapheneAlexander K. Fedotov0Sergey L. Prishchepa1Alexander S. Fedotov2Vladzislaw E. Gumennik3Ivan V. Komissarov4Artem O. Konakov5Svetlana A. Vorobyova6Andrei A. Kharchenko7Oleg A. Ivashkevich8Belarusian State University, Department of Energy PhysicsBelarusian State University of Informatics and RadioelectronicsBelarusian State UniversityBelarusian State UniversityBelarusian State University of Informatics and RadioelectronicsResearch Institute for Physical Chemical Problems of the Belarusian State UniversityResearch Institute for Physical Chemical Problems of the Belarusian State UniversityResearch Institute for Nuclear Problems of Belarusian State UniversityResearch Institute for Physical Chemical Problems of the Belarusian State UniversityGraphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles forming Ohmic contacts with graphene layers. We have compared layer resistivity as a function of temperature and magnetic field R□(T, B) for as-synthesized and decorated twisted graphene on silicon oxide substrates. Experiments have proven the existence of negative (induction < 1 Tl) and positive (induction > 1 Tl) contributions to magnetoresistance in both specimen types. The R□(T, B) functions have been analyzed based on the theory of 2D quantum interference corrections to Drude conductivity taking into account competition of hopping conductivity mechanism. We show that for the experimental temperature range (2–300 K) and magnetic field range (up to 8 Tl), carrier transport description in test graphene requires taking into account at least three interference contributions to conductivity, i.e., from weak localization, intervalley scattering and pseudospin chirality, as well as graphene buckling induced by thermal fluctuations.https://moem.pensoft.net/article/52068/download/pdf/
spellingShingle Alexander K. Fedotov
Sergey L. Prishchepa
Alexander S. Fedotov
Vladzislaw E. Gumennik
Ivan V. Komissarov
Artem O. Konakov
Svetlana A. Vorobyova
Andrei A. Kharchenko
Oleg A. Ivashkevich
Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene
Modern Electronic Materials
title Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene
title_full Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene
title_fullStr Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene
title_full_unstemmed Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene
title_short Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene
title_sort effect of cobalt particle deposition on quantum corrections to drude conductivity in twisted cvd graphene
url https://moem.pensoft.net/article/52068/download/pdf/
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