Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene
Graphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles...
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Format: | Article |
Language: | English |
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Pensoft Publishers
2019-12-01
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Series: | Modern Electronic Materials |
Online Access: | https://moem.pensoft.net/article/52068/download/pdf/ |
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author | Alexander K. Fedotov Sergey L. Prishchepa Alexander S. Fedotov Vladzislaw E. Gumennik Ivan V. Komissarov Artem O. Konakov Svetlana A. Vorobyova Andrei A. Kharchenko Oleg A. Ivashkevich |
author_facet | Alexander K. Fedotov Sergey L. Prishchepa Alexander S. Fedotov Vladzislaw E. Gumennik Ivan V. Komissarov Artem O. Konakov Svetlana A. Vorobyova Andrei A. Kharchenko Oleg A. Ivashkevich |
author_sort | Alexander K. Fedotov |
collection | DOAJ |
description | Graphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles forming Ohmic contacts with graphene layers. We have compared layer resistivity as a function of temperature and magnetic field R□(T, B) for as-synthesized and decorated twisted graphene on silicon oxide substrates. Experiments have proven the existence of negative (induction < 1 Tl) and positive (induction > 1 Tl) contributions to magnetoresistance in both specimen types. The R□(T, B) functions have been analyzed based on the theory of 2D quantum interference corrections to Drude conductivity taking into account competition of hopping conductivity mechanism. We show that for the experimental temperature range (2–300 K) and magnetic field range (up to 8 Tl), carrier transport description in test graphene requires taking into account at least three interference contributions to conductivity, i.e., from weak localization, intervalley scattering and pseudospin chirality, as well as graphene buckling induced by thermal fluctuations. |
first_indexed | 2024-03-12T08:20:45Z |
format | Article |
id | doaj.art-687ac82450734e55ad07e5a68ad1f494 |
institution | Directory Open Access Journal |
issn | 2452-1779 |
language | English |
last_indexed | 2024-03-12T08:20:45Z |
publishDate | 2019-12-01 |
publisher | Pensoft Publishers |
record_format | Article |
series | Modern Electronic Materials |
spelling | doaj.art-687ac82450734e55ad07e5a68ad1f4942023-09-02T18:30:08ZengPensoft PublishersModern Electronic Materials2452-17792019-12-015416517310.3897/j.moem.5.4.5206852068Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD grapheneAlexander K. Fedotov0Sergey L. Prishchepa1Alexander S. Fedotov2Vladzislaw E. Gumennik3Ivan V. Komissarov4Artem O. Konakov5Svetlana A. Vorobyova6Andrei A. Kharchenko7Oleg A. Ivashkevich8Belarusian State University, Department of Energy PhysicsBelarusian State University of Informatics and RadioelectronicsBelarusian State UniversityBelarusian State UniversityBelarusian State University of Informatics and RadioelectronicsResearch Institute for Physical Chemical Problems of the Belarusian State UniversityResearch Institute for Physical Chemical Problems of the Belarusian State UniversityResearch Institute for Nuclear Problems of Belarusian State UniversityResearch Institute for Physical Chemical Problems of the Belarusian State UniversityGraphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles forming Ohmic contacts with graphene layers. We have compared layer resistivity as a function of temperature and magnetic field R□(T, B) for as-synthesized and decorated twisted graphene on silicon oxide substrates. Experiments have proven the existence of negative (induction < 1 Tl) and positive (induction > 1 Tl) contributions to magnetoresistance in both specimen types. The R□(T, B) functions have been analyzed based on the theory of 2D quantum interference corrections to Drude conductivity taking into account competition of hopping conductivity mechanism. We show that for the experimental temperature range (2–300 K) and magnetic field range (up to 8 Tl), carrier transport description in test graphene requires taking into account at least three interference contributions to conductivity, i.e., from weak localization, intervalley scattering and pseudospin chirality, as well as graphene buckling induced by thermal fluctuations.https://moem.pensoft.net/article/52068/download/pdf/ |
spellingShingle | Alexander K. Fedotov Sergey L. Prishchepa Alexander S. Fedotov Vladzislaw E. Gumennik Ivan V. Komissarov Artem O. Konakov Svetlana A. Vorobyova Andrei A. Kharchenko Oleg A. Ivashkevich Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene Modern Electronic Materials |
title | Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene |
title_full | Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene |
title_fullStr | Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene |
title_full_unstemmed | Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene |
title_short | Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene |
title_sort | effect of cobalt particle deposition on quantum corrections to drude conductivity in twisted cvd graphene |
url | https://moem.pensoft.net/article/52068/download/pdf/ |
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