Effect of pre-sulfurization treatment of periodic precursor on Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film
The Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film has advantages of naturally abundant elements and high absorption coefficient, which make it an ideal absorber material for thin film solar cell. The periodic metal precursors of Cu<sub>2</sub>ZnSnS<sub>4</sub...
| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
| Published: |
Journal of Materials Engineering
2019-03-01
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| Series: | Cailiao gongcheng |
| Subjects: | |
| Online Access: | http://html.rhhz.net/CHXB/html/2020-3-155.htm |
| Summary: | The Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film has advantages of naturally abundant elements and high absorption coefficient, which make it an ideal absorber material for thin film solar cell. The periodic metal precursors of Cu<sub>2</sub>ZnSnS<sub>4</sub> were deposited by magnetron sputtering. Then, the Cu<sub>2</sub>ZnSnS<sub>4</sub> thin films were fabricated by two-step sulfurization treatment of the periodic precursors. The effects of the first step sulfurization (pre-sulfurization) on the properties of Cu<sub>2</sub>ZnSnS<sub>4</sub> thin films were studied. The results indicate that the pre-sulfurization treatment can promote the sulfurization reactions of periodic precursors. The crystallinities of Cu<sub>2</sub>ZnSnS<sub>4</sub> thin films with pre-sulfurization are superior to that of Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film without pre-sulfurization. When the pre-sulfurization temperature is 350℃, the increase of pre-sulfurization time is beneficial to the sulfurization reactions of precursors and inhibition of Sn-loss. However, an overlong pre-sulfurization time leads to easy formations of secondary phases in the final thin films, which affect the properties of Cu<sub>2</sub>ZnSnS<sub>4</sub> thin films. The pre-sulfurization temperature of 350℃ and pre-sulfurization time of 10 min can get the best crystallinity of Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film with Cu-poor and Zn-rich composition and void-free surface. |
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| ISSN: | 1001-4381 1001-4381 |