Thin‐Film Lithium Niobate Optical Modulators with an Extrapolated Bandwidth of 170 GHz

High‐speed modulators with low driving voltage, low loss, and compact size are essential for future optical communication systems. Thin‐film lithium niobate modulators have met each of these criteria separately, but simultaneous achievement of all of them has been challenging on this platform. Low d...

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Main Authors: Farzaneh Arab Juneghani, Milad Gholipour Vazimali, Jie Zhao, Xi Chen, Son Thai Le, Haoshuo Chen, Ehsan Ordouie, Nicolas K Fontaine, Sasan Fathpour
Format: Article
Language:English
Published: Wiley-VCH 2023-01-01
Series:Advanced Photonics Research
Subjects:
Online Access:https://doi.org/10.1002/adpr.202200216
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author Farzaneh Arab Juneghani
Milad Gholipour Vazimali
Jie Zhao
Xi Chen
Son Thai Le
Haoshuo Chen
Ehsan Ordouie
Nicolas K Fontaine
Sasan Fathpour
author_facet Farzaneh Arab Juneghani
Milad Gholipour Vazimali
Jie Zhao
Xi Chen
Son Thai Le
Haoshuo Chen
Ehsan Ordouie
Nicolas K Fontaine
Sasan Fathpour
author_sort Farzaneh Arab Juneghani
collection DOAJ
description High‐speed modulators with low driving voltage, low loss, and compact size are essential for future optical communication systems. Thin‐film lithium niobate modulators have met each of these criteria separately, but simultaneous achievement of all of them has been challenging on this platform. Low driving voltage electro‐optic modulators necessitate either a narrow gap between the electrodes or an elongated Mach–Zehnder arms, both of which adversely affect the microwave loss, hence the bandwidth. Herein, this trade‐off is alleviated by placing the optical waveguides nonsymmetrically with respect to the electrodes and by including a dielectric buffer layer beneath the electrodes. Exploiting this novel design yields a modulator with a measured roll‐off of only 2 dB from low frequencies up to 100 GHz, and with an extrapolated 3 dB bandwidth of 170 GHz. The measured voltage–length product of this subterahertz device is 3.3 V cm. Another device, optimized for a lower voltage–length product of 2.2 V cm, exhibits a 3 dB electro‐optic bandwidth of 84 GHz. The devices are also tested for eight‐level pulse‐amplitude modulation (PAM‐8) and demonstrate data rates of up to 240 Gb s−1 at 80 Gbaud, validating that the modulators are a propitious candidate for next‐generation optical communication systems.
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spelling doaj.art-69053169cee6494db22b426c6408eac82023-01-06T15:30:44ZengWiley-VCHAdvanced Photonics Research2699-92932023-01-0141n/an/a10.1002/adpr.202200216Thin‐Film Lithium Niobate Optical Modulators with an Extrapolated Bandwidth of 170 GHzFarzaneh Arab Juneghani0Milad Gholipour Vazimali1Jie Zhao2Xi Chen3Son Thai Le4Haoshuo Chen5Ehsan Ordouie6Nicolas K Fontaine7Sasan Fathpour8CREOL, The College of Optics and Photonics University of Central Florida Orlando FL 32816 USACREOL, The College of Optics and Photonics University of Central Florida Orlando FL 32816 USANokia Bell Labs 600 Mountain Avenue Murray Hill NJ 07974 USANokia Bell Labs 600 Mountain Avenue Murray Hill NJ 07974 USANokia Bell Labs 600 Mountain Avenue Murray Hill NJ 07974 USANokia Bell Labs 600 Mountain Avenue Murray Hill NJ 07974 USACREOL, The College of Optics and Photonics University of Central Florida Orlando FL 32816 USANokia Bell Labs 600 Mountain Avenue Murray Hill NJ 07974 USACREOL, The College of Optics and Photonics University of Central Florida Orlando FL 32816 USAHigh‐speed modulators with low driving voltage, low loss, and compact size are essential for future optical communication systems. Thin‐film lithium niobate modulators have met each of these criteria separately, but simultaneous achievement of all of them has been challenging on this platform. Low driving voltage electro‐optic modulators necessitate either a narrow gap between the electrodes or an elongated Mach–Zehnder arms, both of which adversely affect the microwave loss, hence the bandwidth. Herein, this trade‐off is alleviated by placing the optical waveguides nonsymmetrically with respect to the electrodes and by including a dielectric buffer layer beneath the electrodes. Exploiting this novel design yields a modulator with a measured roll‐off of only 2 dB from low frequencies up to 100 GHz, and with an extrapolated 3 dB bandwidth of 170 GHz. The measured voltage–length product of this subterahertz device is 3.3 V cm. Another device, optimized for a lower voltage–length product of 2.2 V cm, exhibits a 3 dB electro‐optic bandwidth of 84 GHz. The devices are also tested for eight‐level pulse‐amplitude modulation (PAM‐8) and demonstrate data rates of up to 240 Gb s−1 at 80 Gbaud, validating that the modulators are a propitious candidate for next‐generation optical communication systems.https://doi.org/10.1002/adpr.202200216low voltagethin-film lithium niobate modulatorsultrahigh-speed
spellingShingle Farzaneh Arab Juneghani
Milad Gholipour Vazimali
Jie Zhao
Xi Chen
Son Thai Le
Haoshuo Chen
Ehsan Ordouie
Nicolas K Fontaine
Sasan Fathpour
Thin‐Film Lithium Niobate Optical Modulators with an Extrapolated Bandwidth of 170 GHz
Advanced Photonics Research
low voltage
thin-film lithium niobate modulators
ultrahigh-speed
title Thin‐Film Lithium Niobate Optical Modulators with an Extrapolated Bandwidth of 170 GHz
title_full Thin‐Film Lithium Niobate Optical Modulators with an Extrapolated Bandwidth of 170 GHz
title_fullStr Thin‐Film Lithium Niobate Optical Modulators with an Extrapolated Bandwidth of 170 GHz
title_full_unstemmed Thin‐Film Lithium Niobate Optical Modulators with an Extrapolated Bandwidth of 170 GHz
title_short Thin‐Film Lithium Niobate Optical Modulators with an Extrapolated Bandwidth of 170 GHz
title_sort thin film lithium niobate optical modulators with an extrapolated bandwidth of 170 ghz
topic low voltage
thin-film lithium niobate modulators
ultrahigh-speed
url https://doi.org/10.1002/adpr.202200216
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