Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate
A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN _x ), were used to passivate the heterostructure surface. A 3.5 nm thick SiN _x cap is...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab96f5 |
| _version_ | 1797746335077629952 |
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| author | Yuanyang Xia Youhua Zhu Chunhua Liu Hongyuan Wei Tingting Zhang Yeeheng Lee Tinggang Zhu Meiyu wang Li Yi Mei Ge |
| author_facet | Yuanyang Xia Youhua Zhu Chunhua Liu Hongyuan Wei Tingting Zhang Yeeheng Lee Tinggang Zhu Meiyu wang Li Yi Mei Ge |
| author_sort | Yuanyang Xia |
| collection | DOAJ |
| description | A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN _x ), were used to passivate the heterostructure surface. A 3.5 nm thick SiN _x cap is able to maintain the two dimensional electron gas (2DEG) stability in a long period. An AlN/GaN heterostructure with a 4.5 nm thick AlN barrier exhibits the best 2DEG properties, in terms of sheet resistance, carrier mobility and stability. The carrier mobility of the 2DEG can be enhanced by a combination of SiNx and GaN cap layers to over 1400 cm ^2 /Vs. |
| first_indexed | 2024-03-12T15:35:23Z |
| format | Article |
| id | doaj.art-69116d6aa5ec435fbc2fe0bcb2d84e23 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:35:23Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-69116d6aa5ec435fbc2fe0bcb2d84e232023-08-09T16:14:12ZengIOP PublishingMaterials Research Express2053-15912020-01-017606590210.1088/2053-1591/ab96f5Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrateYuanyang Xia0Youhua Zhu1https://orcid.org/0000-0002-9004-3121Chunhua Liu2Hongyuan Wei3Tingting Zhang4Yeeheng Lee5Tinggang Zhu6Meiyu wang7Li Yi8Mei Ge9CorEnergy Semiconductor Co., LTD, Zhangjiagang 215600, People’s Republic of ChinaCorEnergy Semiconductor Co., LTD, Zhangjiagang 215600, People’s Republic of China; School of Information Science and Technology, Nantong University , Nantong 226019, People’s Republic of ChinaCorEnergy Semiconductor Co., LTD, Zhangjiagang 215600, People’s Republic of ChinaCorEnergy Semiconductor Co., LTD, Zhangjiagang 215600, People’s Republic of ChinaCorEnergy Semiconductor Co., LTD, Zhangjiagang 215600, People’s Republic of ChinaCorEnergy Semiconductor Co., LTD, Zhangjiagang 215600, People’s Republic of ChinaCorEnergy Semiconductor Co., LTD, Zhangjiagang 215600, People’s Republic of ChinaSchool of Information Science and Technology, Nantong University , Nantong 226019, People’s Republic of ChinaSchool of Information Science and Technology, Nantong University , Nantong 226019, People’s Republic of ChinaSchool of Information Science and Technology, Nantong University , Nantong 226019, People’s Republic of ChinaA series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN _x ), were used to passivate the heterostructure surface. A 3.5 nm thick SiN _x cap is able to maintain the two dimensional electron gas (2DEG) stability in a long period. An AlN/GaN heterostructure with a 4.5 nm thick AlN barrier exhibits the best 2DEG properties, in terms of sheet resistance, carrier mobility and stability. The carrier mobility of the 2DEG can be enhanced by a combination of SiNx and GaN cap layers to over 1400 cm ^2 /Vs.https://doi.org/10.1088/2053-1591/ab96f5MOCVDGaNsurface structure2DEGmobility |
| spellingShingle | Yuanyang Xia Youhua Zhu Chunhua Liu Hongyuan Wei Tingting Zhang Yeeheng Lee Tinggang Zhu Meiyu wang Li Yi Mei Ge Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate Materials Research Express MOCVD GaN surface structure 2DEG mobility |
| title | Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate |
| title_full | Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate |
| title_fullStr | Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate |
| title_full_unstemmed | Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate |
| title_short | Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate |
| title_sort | effects of the cap layer on the properties of aln barrier hemt grown on 6 inch si 111 substrate |
| topic | MOCVD GaN surface structure 2DEG mobility |
| url | https://doi.org/10.1088/2053-1591/ab96f5 |
| work_keys_str_mv | AT yuanyangxia effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate AT youhuazhu effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate AT chunhualiu effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate AT hongyuanwei effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate AT tingtingzhang effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate AT yeehenglee effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate AT tinggangzhu effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate AT meiyuwang effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate AT liyi effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate AT meige effectsofthecaplayeronthepropertiesofalnbarrierhemtgrownon6inchsi111substrate |