Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

A series of AlN/GaN heterostructures were grown on 150 mm Si substrates by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiN _x ), were used to passivate the heterostructure surface. A 3.5 nm thick SiN _x cap is...

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Bibliographic Details
Main Authors: Yuanyang Xia, Youhua Zhu, Chunhua Liu, Hongyuan Wei, Tingting Zhang, Yeeheng Lee, Tinggang Zhu, Meiyu wang, Li Yi, Mei Ge
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
MOCVD
GaN
surface structure
2DEG
mobility
Online Access:https://doi.org/10.1088/2053-1591/ab96f5

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