A Detailed Model of a half bridge IGBT Power Module Based on the Analytical ‎Calculation and Measurement for EMC Study ‎

A Detailed Model of a half bridge IGBT Power Module Based on the Analytical ‎Calculation and Measurement for EMC Study ‎

The parasitic parameters of an IGBT power module cause various problems, especially for electromagnetic compatibility (EMC) concerns. The high-variations in voltage and current produced by the inductances/capacitances near switches in the transient process are the main sources of high-frequency elec...

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Bibliographic Details
Main Authors:	J. Borsalani, A. Dastfan, J. Ghalibafan
Format:	Article
Language:	English
Published:	University of Mohaghegh Ardabili 2022-04-01
Series:	Journal of Operation and Automation in Power Engineering
Subjects:	electromagnetic compatibility (emc) igbt detailed model measurement-based modeling parasitic impedance ‎switching transient simulation.‎
Online Access:	http://joape.uma.ac.ir/article_1153_ac8aab1cc3fa2855b13fe87c385f1ad8.pdf

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