Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

Abstract The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors....

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Main Authors: Yantao Chen, Xiaohan Wu, Yingli Chu, Jiachen Zhou, Bilei Zhou, Jia Huang
Format: Article
Language:English
Published: SpringerOpen 2018-06-01
Series:Nano-Micro Letters
Subjects:
Online Access:http://link.springer.com/article/10.1007/s40820-018-0210-8
_version_ 1828841277673701376
author Yantao Chen
Xiaohan Wu
Yingli Chu
Jiachen Zhou
Bilei Zhou
Jia Huang
author_facet Yantao Chen
Xiaohan Wu
Yingli Chu
Jiachen Zhou
Bilei Zhou
Jia Huang
author_sort Yantao Chen
collection DOAJ
description Abstract The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photosensing performances of the CsPbI3 nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl [1] benzothieno[3,2-b] [1] benzothiophene and CsPbI3 nanorod layer was fabricated. The high-quality CsPbI3 nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. The perovskite layer efficiently absorbs light, while the organic semiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photogating effect and field effect in the transistor, with a photoresponsivity as high as 4300 A W−1, ultra-high photosensitivity of 2.2 × 106, and excellent stability over 1 month. This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.
first_indexed 2024-12-12T20:00:19Z
format Article
id doaj.art-696d733ee92f4b5092000452a8f9a520
institution Directory Open Access Journal
issn 2311-6706
2150-5551
language English
last_indexed 2024-12-12T20:00:19Z
publishDate 2018-06-01
publisher SpringerOpen
record_format Article
series Nano-Micro Letters
spelling doaj.art-696d733ee92f4b5092000452a8f9a5202022-12-22T00:13:47ZengSpringerOpenNano-Micro Letters2311-67062150-55512018-06-011041910.1007/s40820-018-0210-8Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer StructureYantao Chen0Xiaohan Wu1Yingli Chu2Jiachen Zhou3Bilei Zhou4Jia Huang5Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji UniversityInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji UniversityInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji UniversityInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji UniversityInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji UniversityKey Laboratory of Road and Traffic Engineering of Ministry of Education, Tongji UniversityAbstract The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photosensing performances of the CsPbI3 nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl [1] benzothieno[3,2-b] [1] benzothiophene and CsPbI3 nanorod layer was fabricated. The high-quality CsPbI3 nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. The perovskite layer efficiently absorbs light, while the organic semiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photogating effect and field effect in the transistor, with a photoresponsivity as high as 4300 A W−1, ultra-high photosensitivity of 2.2 × 106, and excellent stability over 1 month. This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.http://link.springer.com/article/10.1007/s40820-018-0210-8PerovskitePhototransistorNanorodOrganic semiconductorPhotogating effect
spellingShingle Yantao Chen
Xiaohan Wu
Yingli Chu
Jiachen Zhou
Bilei Zhou
Jia Huang
Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure
Nano-Micro Letters
Perovskite
Phototransistor
Nanorod
Organic semiconductor
Photogating effect
title Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure
title_full Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure
title_fullStr Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure
title_full_unstemmed Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure
title_short Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure
title_sort hybrid field effect transistors and photodetectors based on organic semiconductor and cspbi3 perovskite nanorods bilayer structure
topic Perovskite
Phototransistor
Nanorod
Organic semiconductor
Photogating effect
url http://link.springer.com/article/10.1007/s40820-018-0210-8
work_keys_str_mv AT yantaochen hybridfieldeffecttransistorsandphotodetectorsbasedonorganicsemiconductorandcspbi3perovskitenanorodsbilayerstructure
AT xiaohanwu hybridfieldeffecttransistorsandphotodetectorsbasedonorganicsemiconductorandcspbi3perovskitenanorodsbilayerstructure
AT yinglichu hybridfieldeffecttransistorsandphotodetectorsbasedonorganicsemiconductorandcspbi3perovskitenanorodsbilayerstructure
AT jiachenzhou hybridfieldeffecttransistorsandphotodetectorsbasedonorganicsemiconductorandcspbi3perovskitenanorodsbilayerstructure
AT bileizhou hybridfieldeffecttransistorsandphotodetectorsbasedonorganicsemiconductorandcspbi3perovskitenanorodsbilayerstructure
AT jiahuang hybridfieldeffecttransistorsandphotodetectorsbasedonorganicsemiconductorandcspbi3perovskitenanorodsbilayerstructure