Research on Narrow Linewidth External Cavity Semiconductor Lasers
Narrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticit...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-07-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/7/956 |
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| author | Keke Ding Yuhang Ma Long Wei Xuan Li Junce Shi Zaijin Li Yi Qu Lin Li Zhongliang Qiao Guojun Liu Lina Zeng |
| author_facet | Keke Ding Yuhang Ma Long Wei Xuan Li Junce Shi Zaijin Li Yi Qu Lin Li Zhongliang Qiao Guojun Liu Lina Zeng |
| author_sort | Keke Ding |
| collection | DOAJ |
| description | Narrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticity and wide wavelength tuning potential, NLECSLs have attracted much attention for their merits. In this paper, three main device structures for achieving NLECSLs are reviewed and compared in detail, such as free space bulk diffraction grating external cavity structure, waveguide external cavity structure and confocal Fabry–Perot cavity structure of NLECSLs. The Littrow structure and Littman structure of NLECSLs are introduced from the free space bulk diffraction grating external cavity structure of NLECSLs. The fiber Bragg grating external cavity structure and silicon based waveguide external cavity structure of NLECSLs are introduced from the waveguide external cavity structure of NLECSLs. The results show that the confocal Fabry–Perot cavity structure of NLECSLs is a potential way to realize a lower than tens Hz narrow linewidth laser output. |
| first_indexed | 2024-03-09T03:33:30Z |
| format | Article |
| id | doaj.art-6974007c4686408b97accd71ea76aa3a |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T03:33:30Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-6974007c4686408b97accd71ea76aa3a2023-12-03T14:52:31ZengMDPI AGCrystals2073-43522022-07-0112795610.3390/cryst12070956Research on Narrow Linewidth External Cavity Semiconductor LasersKeke Ding0Yuhang Ma1Long Wei2Xuan Li3Junce Shi4Zaijin Li5Yi Qu6Lin Li7Zhongliang Qiao8Guojun Liu9Lina Zeng10Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaKey Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, ChinaNarrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticity and wide wavelength tuning potential, NLECSLs have attracted much attention for their merits. In this paper, three main device structures for achieving NLECSLs are reviewed and compared in detail, such as free space bulk diffraction grating external cavity structure, waveguide external cavity structure and confocal Fabry–Perot cavity structure of NLECSLs. The Littrow structure and Littman structure of NLECSLs are introduced from the free space bulk diffraction grating external cavity structure of NLECSLs. The fiber Bragg grating external cavity structure and silicon based waveguide external cavity structure of NLECSLs are introduced from the waveguide external cavity structure of NLECSLs. The results show that the confocal Fabry–Perot cavity structure of NLECSLs is a potential way to realize a lower than tens Hz narrow linewidth laser output.https://www.mdpi.com/2073-4352/12/7/956narrow linewidthexternal cavityFSBDGFBGsilicon-based waveguideconfocal F-P cavity |
| spellingShingle | Keke Ding Yuhang Ma Long Wei Xuan Li Junce Shi Zaijin Li Yi Qu Lin Li Zhongliang Qiao Guojun Liu Lina Zeng Research on Narrow Linewidth External Cavity Semiconductor Lasers Crystals narrow linewidth external cavity FSBDG FBG silicon-based waveguide confocal F-P cavity |
| title | Research on Narrow Linewidth External Cavity Semiconductor Lasers |
| title_full | Research on Narrow Linewidth External Cavity Semiconductor Lasers |
| title_fullStr | Research on Narrow Linewidth External Cavity Semiconductor Lasers |
| title_full_unstemmed | Research on Narrow Linewidth External Cavity Semiconductor Lasers |
| title_short | Research on Narrow Linewidth External Cavity Semiconductor Lasers |
| title_sort | research on narrow linewidth external cavity semiconductor lasers |
| topic | narrow linewidth external cavity FSBDG FBG silicon-based waveguide confocal F-P cavity |
| url | https://www.mdpi.com/2073-4352/12/7/956 |
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