Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates. An alumina interlayer was used to achieve the thickness independent of the HSO and HZO...

Full description

Bibliographic Details
Main Authors: Tarek Ali, Kati Kühnel, Ricardo Olivo, David Lehninger, Franz Müller, Maximilian Lederer, Matthias Rudolph, Sebastian Oehler, Konstantin Mertens, Raik Hoffmann, Katrin Zimmermann, Philipp Schramm, Joachim Metzger, Robert Binder, Malte Czernohorsky, Thomas Kämpfe, Konrad Seidel, Johannes Müller, Jan Van Houdt, Lukas M. Eng
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Electronic Materials
Subjects:
ferroelectric
hafnium oxide
laminate
FeFET
synaptic device
Online Access:https://www.mdpi.com/2673-3978/2/3/24

Internet

https://www.mdpi.com/2673-3978/2/3/24

Similar Items