First-Principles Study of Electronic Properties of Substitutionally Doped Monolayer SnP<sub>3</sub>

SnP<sub>3</sub> has a great prospect in electronic and thermoelectric device applications due to its moderate band gap, high carrier mobility, absorption coefficients, and dynamical and chemical stability. Doping in two-dimensional semiconductors is likely to display various anomalous be...

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Bibliographic Details
Main Authors: Ningxia Zhang, Xiaodan Li, Shihao Ruan, Xiong Chen, Shenghao Li, Taotao Hu
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/15/7/2462