Surface morphology analysis of silicon doped with erbium atoms
This scientific work presents an analysis of the structural and electrical properties of light-emitting structures based on a single crystal of silicon doped with the rare earth element. As a result of thermal treatment of the initial samples at a temperature of 1200 ºC, it was found that the surfac...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2024-01-01
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| Series: | E3S Web of Conferences |
| Subjects: | |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2024/38/e3sconf_greenenergy2024_07009.pdf |
| _version_ | 1827287188858994688 |
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| author | Utamuradova Sharifa Khamdamov Jonibek Zarifbayev Jasur Fayzullaev Kakhramon |
| author_facet | Utamuradova Sharifa Khamdamov Jonibek Zarifbayev Jasur Fayzullaev Kakhramon |
| author_sort | Utamuradova Sharifa |
| collection | DOAJ |
| description | This scientific work presents an analysis of the structural and electrical properties of light-emitting structures based on a single crystal of silicon doped with the rare earth element. As a result of thermal treatment of the initial samples at a temperature of 1200 ºC, it was found that the surface relief width of the sample decreased by 1.5÷2 times and the surface height increased by 3 times. According to the atomic force microscope analysis, it was found that n-Si<Er> samples have nanostructured surface defects with a surface relief width of 20÷300 nm and a height of 9÷42 nm. It was found that impurity atoms have a significant effect on the quantitative parameters of the initial sample atoms. As a result of the introduction of Er atoms into the control sample, it was determined that the number of technological impurities (O, C) increased by 10-15% by introducing one of the rare-earth elements (Er). |
| first_indexed | 2024-04-24T10:54:12Z |
| format | Article |
| id | doaj.art-6a6da4b560414937aa7fe46daff3c4b9 |
| institution | Directory Open Access Journal |
| issn | 2267-1242 |
| language | English |
| last_indexed | 2024-04-24T10:54:12Z |
| publishDate | 2024-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | E3S Web of Conferences |
| spelling | doaj.art-6a6da4b560414937aa7fe46daff3c4b92024-04-12T07:40:20ZengEDP SciencesE3S Web of Conferences2267-12422024-01-015080700910.1051/e3sconf/202450807009e3sconf_greenenergy2024_07009Surface morphology analysis of silicon doped with erbium atomsUtamuradova Sharifa0Khamdamov Jonibek1Zarifbayev Jasur2Fayzullaev Kakhramon3Institute of Semiconductor Physics and Microelectronics at the National University of UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of UzbekistanThis scientific work presents an analysis of the structural and electrical properties of light-emitting structures based on a single crystal of silicon doped with the rare earth element. As a result of thermal treatment of the initial samples at a temperature of 1200 ºC, it was found that the surface relief width of the sample decreased by 1.5÷2 times and the surface height increased by 3 times. According to the atomic force microscope analysis, it was found that n-Si<Er> samples have nanostructured surface defects with a surface relief width of 20÷300 nm and a height of 9÷42 nm. It was found that impurity atoms have a significant effect on the quantitative parameters of the initial sample atoms. As a result of the introduction of Er atoms into the control sample, it was determined that the number of technological impurities (O, C) increased by 10-15% by introducing one of the rare-earth elements (Er).https://www.e3s-conferences.org/articles/e3sconf/pdf/2024/38/e3sconf_greenenergy2024_07009.pdfsiliconerbiumaccessdopingdefectdiffusionoxygencarbonsemafm |
| spellingShingle | Utamuradova Sharifa Khamdamov Jonibek Zarifbayev Jasur Fayzullaev Kakhramon Surface morphology analysis of silicon doped with erbium atoms E3S Web of Conferences silicon erbium access doping defect diffusion oxygen carbon sem afm |
| title | Surface morphology analysis of silicon doped with erbium atoms |
| title_full | Surface morphology analysis of silicon doped with erbium atoms |
| title_fullStr | Surface morphology analysis of silicon doped with erbium atoms |
| title_full_unstemmed | Surface morphology analysis of silicon doped with erbium atoms |
| title_short | Surface morphology analysis of silicon doped with erbium atoms |
| title_sort | surface morphology analysis of silicon doped with erbium atoms |
| topic | silicon erbium access doping defect diffusion oxygen carbon sem afm |
| url | https://www.e3s-conferences.org/articles/e3sconf/pdf/2024/38/e3sconf_greenenergy2024_07009.pdf |
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