Surface morphology analysis of silicon doped with erbium atoms

This scientific work presents an analysis of the structural and electrical properties of light-emitting structures based on a single crystal of silicon doped with the rare earth element. As a result of thermal treatment of the initial samples at a temperature of 1200 ºC, it was found that the surfac...

Full description

Bibliographic Details
Main Authors: Utamuradova Sharifa, Khamdamov Jonibek, Zarifbayev Jasur, Fayzullaev Kakhramon
Format: Article
Language:English
Published: EDP Sciences 2024-01-01
Series:E3S Web of Conferences
Subjects:
Online Access:https://www.e3s-conferences.org/articles/e3sconf/pdf/2024/38/e3sconf_greenenergy2024_07009.pdf

Similar Items