Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface
Using Vary-temperature Scanning Tunnelling Microscopy (VT-STM), the geometric and electronic structures of technological important Sr/Si(100)-2×3 surface were investigated. Two important findings explained in this research. First, a phenomenon similar to quantum corral observed in the empty state ST...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4998918 |
| _version_ | 1811207661172031488 |
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| author | Wenhan Du Bing Wang Jingjing Yang Keke Zhang Yu Zhao Chao Xiong Jinxiang Ma Lei Chen Xifang Zhu |
| author_facet | Wenhan Du Bing Wang Jingjing Yang Keke Zhang Yu Zhao Chao Xiong Jinxiang Ma Lei Chen Xifang Zhu |
| author_sort | Wenhan Du |
| collection | DOAJ |
| description | Using Vary-temperature Scanning Tunnelling Microscopy (VT-STM), the geometric and electronic structures of technological important Sr/Si(100)-2×3 surface were investigated. Two important findings explained in this research. First, a phenomenon similar to quantum corral observed in the empty state STM image that near the bottom of the conduction band. This is aroused from the surface vacancies and phase boundary in the Sr/Si(100)-2×3 surface. And a new Sr/Si(100)-2×6 reconstructed structure coexist with Sr/Si(100)-2×3 surface has been prepared by accurately controlling the annealing temperature, both surface’s geometric structures can be described by dimer vacancy model. Second, tip-induced band bending phenomenon was observed in the Sr/Si(100)-2×3 surface at substrate temperature range from 76K to 300K. Experimental LDOS results from n and p-type silicon substrate confirms 0.3eV up the motion of the valence band minimum compare with bare Si(100)-2×1 surface. Buckled and unbuckled silicon dimer coexisting in the Sr/Si(100)-2×3 reconstructed surface contribute to the tip-induced band bending and energy band gap widen phenomenon. Which confirms that Sr atoms transfer electrons to the nearby silicon dimers, make the first layer silicon dimers kept at unbuckled state. |
| first_indexed | 2024-04-12T04:08:38Z |
| format | Article |
| id | doaj.art-6a76f511ea1f499b967697337107d74a |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T04:08:38Z |
| publishDate | 2017-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-6a76f511ea1f499b967697337107d74a2022-12-22T03:48:34ZengAIP Publishing LLCAIP Advances2158-32262017-12-01712125124125124-610.1063/1.4998918099712ADVTip-induced band bending on Sr/Si(100)-2×3 reconstructed surfaceWenhan Du0Bing Wang1Jingjing Yang2Keke Zhang3Yu Zhao4Chao Xiong5Jinxiang Ma6Lei Chen7Xifang Zhu8Changzhou Institute of Technology, Changzhou, Jiangsu 213002, PRCHefei national laboratory for physical science at the microscale, University of Science and Technology of China, 96# Jinzhai Road, Hefei, Anhui 230026, PRCChangzhou Institute of Technology, Changzhou, Jiangsu 213002, PRCSchool of materials science and Engineering, Nanyang Technological University, 639798, 50 Nanyang Avenue, SingaporeChangzhou Institute of Technology, Changzhou, Jiangsu 213002, PRCChangzhou Institute of Technology, Changzhou, Jiangsu 213002, PRCChangzhou Institute of Technology, Changzhou, Jiangsu 213002, PRCChangzhou Institute of Technology, Changzhou, Jiangsu 213002, PRCChangzhou Institute of Technology, Changzhou, Jiangsu 213002, PRCUsing Vary-temperature Scanning Tunnelling Microscopy (VT-STM), the geometric and electronic structures of technological important Sr/Si(100)-2×3 surface were investigated. Two important findings explained in this research. First, a phenomenon similar to quantum corral observed in the empty state STM image that near the bottom of the conduction band. This is aroused from the surface vacancies and phase boundary in the Sr/Si(100)-2×3 surface. And a new Sr/Si(100)-2×6 reconstructed structure coexist with Sr/Si(100)-2×3 surface has been prepared by accurately controlling the annealing temperature, both surface’s geometric structures can be described by dimer vacancy model. Second, tip-induced band bending phenomenon was observed in the Sr/Si(100)-2×3 surface at substrate temperature range from 76K to 300K. Experimental LDOS results from n and p-type silicon substrate confirms 0.3eV up the motion of the valence band minimum compare with bare Si(100)-2×1 surface. Buckled and unbuckled silicon dimer coexisting in the Sr/Si(100)-2×3 reconstructed surface contribute to the tip-induced band bending and energy band gap widen phenomenon. Which confirms that Sr atoms transfer electrons to the nearby silicon dimers, make the first layer silicon dimers kept at unbuckled state.http://dx.doi.org/10.1063/1.4998918 |
| spellingShingle | Wenhan Du Bing Wang Jingjing Yang Keke Zhang Yu Zhao Chao Xiong Jinxiang Ma Lei Chen Xifang Zhu Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface AIP Advances |
| title | Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface |
| title_full | Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface |
| title_fullStr | Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface |
| title_full_unstemmed | Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface |
| title_short | Tip-induced band bending on Sr/Si(100)-2×3 reconstructed surface |
| title_sort | tip induced band bending on sr si 100 2 3 reconstructed surface |
| url | http://dx.doi.org/10.1063/1.4998918 |
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