Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3 [version 2; peer review: 2 approved]
Background: The development of organic/inorganic metal halide perovskites has seen unprecedent growth since their first recognition for applications in optoelectronic devices. However, their thermodynamic stability and toxicity remains a challenge considering wide-scale deployment in the future. Thi...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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F1000 Research Ltd
2023-05-01
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| Series: | Open Research Europe |
| Subjects: | |
| Online Access: | https://open-research-europe.ec.europa.eu/articles/2-138/v2 |
| _version_ | 1797813939220774912 |
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| author | Artūras Suchodolskis Vidas Pakštas Marius Franckevičius Algirdas Mekys Katri Muska Martynas Talaikis Marit Kauk-Kuusik Xiaofeng Li Victor Kravtsov Rokas Kondrotas Arūnas Krotkus Remigijus Juškėnas |
| author_facet | Artūras Suchodolskis Vidas Pakštas Marius Franckevičius Algirdas Mekys Katri Muska Martynas Talaikis Marit Kauk-Kuusik Xiaofeng Li Victor Kravtsov Rokas Kondrotas Arūnas Krotkus Remigijus Juškėnas |
| author_sort | Artūras Suchodolskis |
| collection | DOAJ |
| description | Background: The development of organic/inorganic metal halide perovskites has seen unprecedent growth since their first recognition for applications in optoelectronic devices. However, their thermodynamic stability and toxicity remains a challenge considering wide-scale deployment in the future. This spurred an interest in search of perovskite-inspired materials which are expected to retain the advantageous material characteristics of halide perovskites, but with high thermodynamic stability and composed of earth-abundant and low toxicity elements. ABX3 chalcogenides (A, B=metals, X=Se, S) have been identified as potential class of materials meeting the aforementioned criteria. Methods: In this work, we focus on studying tin zirconium selenide (SnZrSe3) relevant physical properties with an aim to evaluate its prospects for application in optoelectronics. SnZrSe3 powder and monocrystals were synthesized via solid state reaction in 600 – 800 °C temperature range. Crystalline structure was determined using single crystal and powder X-ray diffraction methods. The bandgap was estimated from diffused reflectance measurements on powder samples and electrical properties of crystals were analysed from temperature dependent I-V measurements. Results: We found that SnZrSe3 crystals have a needle-like structure (space group – Pnma) with following unit cell parameters: a=9.5862(4) Å, b=3.84427(10) Å, c=14.3959(5) Å. The origin of the low symmetry crystalline structure was associated with stereochemical active electron lone pair of Sn cation. Estimated bandgap was around 1.15 eV which was higher than measured previously and predicted theoretically. Additionally, it was found that resistivity and conductivity type depended on the compound chemical composition. Conclusions: Absorption edge in the infrared region and bipolar dopability makes SnZrSe3 an interesting material candidate for application in earth-abundant and non-toxic single/multi-junction solar cells or other infrared based optoelectronic devices. |
| first_indexed | 2024-03-13T07:59:12Z |
| format | Article |
| id | doaj.art-6a8be677e11c4a7ea797818758690199 |
| institution | Directory Open Access Journal |
| issn | 2732-5121 |
| language | English |
| last_indexed | 2024-03-13T07:59:12Z |
| publishDate | 2023-05-01 |
| publisher | F1000 Research Ltd |
| record_format | Article |
| series | Open Research Europe |
| spelling | doaj.art-6a8be677e11c4a7ea7978187586901992023-06-02T00:00:00ZengF1000 Research LtdOpen Research Europe2732-51212023-05-01217286Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3 [version 2; peer review: 2 approved]Artūras Suchodolskis0Vidas Pakštas1Marius Franckevičius2Algirdas Mekys3Katri Muska4https://orcid.org/0000-0002-8037-5675Martynas Talaikis5https://orcid.org/0000-0003-3516-6425Marit Kauk-Kuusik6https://orcid.org/0000-0003-0071-8568Xiaofeng Li7Victor Kravtsov8https://orcid.org/0000-0002-1955-8480Rokas Kondrotas9https://orcid.org/0000-0002-1751-7909Arūnas Krotkus10Remigijus Juškėnas11https://orcid.org/0000-0002-1234-4332Center for Physical Sciences and Technology, Vilnius, 10257, LithuaniaCenter for Physical Sciences and Technology, Vilnius, 10257, LithuaniaCenter for Physical Sciences and Technology, Vilnius, 10257, LithuaniaInstitute of Photonics and Nanotechnology, Vilnius University, Vilnius, 10257, LithuaniaDepartment of Materials and Environmental Technology, Tallinn University of Technology, Tallinn, 19086, EstoniaCenter for Physical Sciences and Technology, Vilnius, 10257, LithuaniaDepartment of Materials and Environmental Technology, Tallinn University of Technology, Tallinn, 19086, EstoniaDepartment of Materials and Environmental Technology, Tallinn University of Technology, Tallinn, 19086, EstoniaInstitute of Applied Physics, Chisinau, MD2028, MoldovaCenter for Physical Sciences and Technology, Vilnius, 10257, LithuaniaCenter for Physical Sciences and Technology, Vilnius, 10257, LithuaniaCenter for Physical Sciences and Technology, Vilnius, 10257, LithuaniaBackground: The development of organic/inorganic metal halide perovskites has seen unprecedent growth since their first recognition for applications in optoelectronic devices. However, their thermodynamic stability and toxicity remains a challenge considering wide-scale deployment in the future. This spurred an interest in search of perovskite-inspired materials which are expected to retain the advantageous material characteristics of halide perovskites, but with high thermodynamic stability and composed of earth-abundant and low toxicity elements. ABX3 chalcogenides (A, B=metals, X=Se, S) have been identified as potential class of materials meeting the aforementioned criteria. Methods: In this work, we focus on studying tin zirconium selenide (SnZrSe3) relevant physical properties with an aim to evaluate its prospects for application in optoelectronics. SnZrSe3 powder and monocrystals were synthesized via solid state reaction in 600 – 800 °C temperature range. Crystalline structure was determined using single crystal and powder X-ray diffraction methods. The bandgap was estimated from diffused reflectance measurements on powder samples and electrical properties of crystals were analysed from temperature dependent I-V measurements. Results: We found that SnZrSe3 crystals have a needle-like structure (space group – Pnma) with following unit cell parameters: a=9.5862(4) Å, b=3.84427(10) Å, c=14.3959(5) Å. The origin of the low symmetry crystalline structure was associated with stereochemical active electron lone pair of Sn cation. Estimated bandgap was around 1.15 eV which was higher than measured previously and predicted theoretically. Additionally, it was found that resistivity and conductivity type depended on the compound chemical composition. Conclusions: Absorption edge in the infrared region and bipolar dopability makes SnZrSe3 an interesting material candidate for application in earth-abundant and non-toxic single/multi-junction solar cells or other infrared based optoelectronic devices.https://open-research-europe.ec.europa.eu/articles/2-138/v2ABX3 chalcogenides crystal structure optoelectronic properties bandgapeng |
| spellingShingle | Artūras Suchodolskis Vidas Pakštas Marius Franckevičius Algirdas Mekys Katri Muska Martynas Talaikis Marit Kauk-Kuusik Xiaofeng Li Victor Kravtsov Rokas Kondrotas Arūnas Krotkus Remigijus Juškėnas Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3 [version 2; peer review: 2 approved] Open Research Europe ABX3 chalcogenides crystal structure optoelectronic properties bandgap eng |
| title | Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3 [version 2; peer review: 2 approved] |
| title_full | Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3 [version 2; peer review: 2 approved] |
| title_fullStr | Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3 [version 2; peer review: 2 approved] |
| title_full_unstemmed | Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3 [version 2; peer review: 2 approved] |
| title_short | Synthesis and physical characteristics of narrow bandgap chalcogenide SnZrSe3 [version 2; peer review: 2 approved] |
| title_sort | synthesis and physical characteristics of narrow bandgap chalcogenide snzrse3 version 2 peer review 2 approved |
| topic | ABX3 chalcogenides crystal structure optoelectronic properties bandgap eng |
| url | https://open-research-europe.ec.europa.eu/articles/2-138/v2 |
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