Effect of Deposition Rate on Structure and Surface Morphology of Thin Evaporated Al Films on Dielectrics and Semiconductors
<p>Aluminum (Al) films with thickness of 100 nm were grown on unheated glass, silicon and mica substrates by electron beam evaporation. The deposition rates were adjusted in the range between 0.1 nm/s and 2 nm/s, the pressure in the vacuum chamber during deposition was lower than 1·10<sup&...
| Váldodahkkit: | , |
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| Materiálatiipa: | Artihkal |
| Giella: | English |
| Almmustuhtton: |
Kaunas University of Technology
2012-12-01
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| Ráidu: | Medžiagotyra |
| Fáttát: | |
| Liŋkkat: | http://matsc.ktu.lt/index.php/MatSc/article/view/3088 |