Scattering of Charge Carriers in Thin Films PbTe:Bi
<p class="ArticleAnnotation"><span lang="EN-US">The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thic...
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2019-07-01
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| Series: | Фізика і хімія твердого тіла |
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| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3868 |
| _version_ | 1831764659146850304 |
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| author | R. Dzumedzey |
| author_facet | R. Dzumedzey |
| author_sort | R. Dzumedzey |
| collection | DOAJ |
| description | <p class="ArticleAnnotation"><span lang="EN-US">The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thickness dependence of the ratio </span><span lang="EN-US">m</span><sub><span lang="EN-US">surf</span></sub><span lang="EN-US">/</span><span lang="EN-US">m</span><sub><span lang="EN-US">bulk</span></sub><span lang="EN-US"> is considered.</span></p> |
| first_indexed | 2024-12-22T05:47:43Z |
| format | Article |
| id | doaj.art-6ac81a3cefe34258939887bff396938b |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-12-22T05:47:43Z |
| publishDate | 2019-07-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-6ac81a3cefe34258939887bff396938b2022-12-21T18:36:57ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892019-07-0120217117410.15330/pcss.20.2.171-1743217Scattering of Charge Carriers in Thin Films PbTe:BiR. Dzumedzey0Прикарпатський національний університет імені Василя Стефаника<p class="ArticleAnnotation"><span lang="EN-US">The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thickness dependence of the ratio </span><span lang="EN-US">m</span><sub><span lang="EN-US">surf</span></sub><span lang="EN-US">/</span><span lang="EN-US">m</span><sub><span lang="EN-US">bulk</span></sub><span lang="EN-US"> is considered.</span></p>http://journals.pu.if.ua/index.php/pcss/article/view/3868плюмбум телуридлегуваннярозсіювання носіїв зарядурухливість |
| spellingShingle | R. Dzumedzey Scattering of Charge Carriers in Thin Films PbTe:Bi Фізика і хімія твердого тіла плюмбум телурид легування розсіювання носіїв заряду рухливість |
| title | Scattering of Charge Carriers in Thin Films PbTe:Bi |
| title_full | Scattering of Charge Carriers in Thin Films PbTe:Bi |
| title_fullStr | Scattering of Charge Carriers in Thin Films PbTe:Bi |
| title_full_unstemmed | Scattering of Charge Carriers in Thin Films PbTe:Bi |
| title_short | Scattering of Charge Carriers in Thin Films PbTe:Bi |
| title_sort | scattering of charge carriers in thin films pbte bi |
| topic | плюмбум телурид легування розсіювання носіїв заряду рухливість |
| url | http://journals.pu.if.ua/index.php/pcss/article/view/3868 |
| work_keys_str_mv | AT rdzumedzey scatteringofchargecarriersinthinfilmspbtebi |