Thickness Dependence of Electronic Structure and Optical Properties of F8BT Thin Films

Electronic devices based on polymer thin films have experienced a tremendous increase in their efficiency in the last two decades. One of the critical factors that affects the efficiency of polymer solar cells or light emitting devices is the presence of structural defects that controls non-radiativ...

Full description

Bibliographic Details
Main Authors: Bita Ghasemi, Jakub Ševčík, Vojtěch Nádaždy, Karol Végsö, Peter Šiffalovič, Pavel Urbánek, Ivo Kuřitka
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Polymers
Subjects:
Online Access:https://www.mdpi.com/2073-4360/14/3/641
_version_ 1797485152229654528
author Bita Ghasemi
Jakub Ševčík
Vojtěch Nádaždy
Karol Végsö
Peter Šiffalovič
Pavel Urbánek
Ivo Kuřitka
author_facet Bita Ghasemi
Jakub Ševčík
Vojtěch Nádaždy
Karol Végsö
Peter Šiffalovič
Pavel Urbánek
Ivo Kuřitka
author_sort Bita Ghasemi
collection DOAJ
description Electronic devices based on polymer thin films have experienced a tremendous increase in their efficiency in the last two decades. One of the critical factors that affects the efficiency of polymer solar cells or light emitting devices is the presence of structural defects that controls non-radiative recombination. The purpose of this report is to demonstrate a non-trivial thickness dependence of optoelectronic properties and structure (dis)order in thin conductive poly(9,9-dioctyfluorene-alt-benzothiadiazole), F8BT, polymer films. The UV-Vis absorption spectra exhibited blue shift and peak broadening; significant changes in 0–0 and 0–1 radiative transition intensity was found in photoluminescence emission spectra. The density of state (DOS) was directly mapped by energy resolved-electrochemical impedance spectroscopy (ER-EIS). Satellite states 0.5 eV below the lowest unoccupied molecular orbital (LUMO) band were revealed for the thinner polymer films. Moreover, the decreasing of the deep states density in the band gap manifested an increment in the material structural ordering with increasing thickness. Changes in the ratio between crystalline phases with face-on and edge-on orientation of F8BT chains were identified in the films by grazing-incidence wide angle X-ray scattering technique. A thickness threshold in all investigated aspects of the films at a thickness of about 100 nm was observed that can be attributed to the development of J-H aggregation in the film structure and mutual interplay between these two modes. Although a specific structure–property relationship thickness threshold value may be expected for thin films prepared from various polymers, solvents and under different process conditions, the value of about 100 nm can be generally considered as the characteristic length scale of this phenomenon.
first_indexed 2024-03-09T23:15:35Z
format Article
id doaj.art-6aedffb39aa64243b1c5352e71068c09
institution Directory Open Access Journal
issn 2073-4360
language English
last_indexed 2024-03-09T23:15:35Z
publishDate 2022-02-01
publisher MDPI AG
record_format Article
series Polymers
spelling doaj.art-6aedffb39aa64243b1c5352e71068c092023-11-23T17:37:21ZengMDPI AGPolymers2073-43602022-02-0114364110.3390/polym14030641Thickness Dependence of Electronic Structure and Optical Properties of F8BT Thin FilmsBita Ghasemi0Jakub Ševčík1Vojtěch Nádaždy2Karol Végsö3Peter Šiffalovič4Pavel Urbánek5Ivo Kuřitka6Centre of Polymer Systems, Tomas Bata University in Zlin, Tr. Tomase Bati 5678, CZ-760 01 Zlin, Czech RepublicCentre of Polymer Systems, Tomas Bata University in Zlin, Tr. Tomase Bati 5678, CZ-760 01 Zlin, Czech RepublicInstitute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, SK-845 11 Bratislava, SlovakiaInstitute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, SK-845 11 Bratislava, SlovakiaInstitute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, SK-845 11 Bratislava, SlovakiaCentre of Polymer Systems, Tomas Bata University in Zlin, Tr. Tomase Bati 5678, CZ-760 01 Zlin, Czech RepublicCentre of Polymer Systems, Tomas Bata University in Zlin, Tr. Tomase Bati 5678, CZ-760 01 Zlin, Czech RepublicElectronic devices based on polymer thin films have experienced a tremendous increase in their efficiency in the last two decades. One of the critical factors that affects the efficiency of polymer solar cells or light emitting devices is the presence of structural defects that controls non-radiative recombination. The purpose of this report is to demonstrate a non-trivial thickness dependence of optoelectronic properties and structure (dis)order in thin conductive poly(9,9-dioctyfluorene-alt-benzothiadiazole), F8BT, polymer films. The UV-Vis absorption spectra exhibited blue shift and peak broadening; significant changes in 0–0 and 0–1 radiative transition intensity was found in photoluminescence emission spectra. The density of state (DOS) was directly mapped by energy resolved-electrochemical impedance spectroscopy (ER-EIS). Satellite states 0.5 eV below the lowest unoccupied molecular orbital (LUMO) band were revealed for the thinner polymer films. Moreover, the decreasing of the deep states density in the band gap manifested an increment in the material structural ordering with increasing thickness. Changes in the ratio between crystalline phases with face-on and edge-on orientation of F8BT chains were identified in the films by grazing-incidence wide angle X-ray scattering technique. A thickness threshold in all investigated aspects of the films at a thickness of about 100 nm was observed that can be attributed to the development of J-H aggregation in the film structure and mutual interplay between these two modes. Although a specific structure–property relationship thickness threshold value may be expected for thin films prepared from various polymers, solvents and under different process conditions, the value of about 100 nm can be generally considered as the characteristic length scale of this phenomenon.https://www.mdpi.com/2073-4360/14/3/641F8BTthin filmschain orderingJ- and H-aggregatesER-EIS
spellingShingle Bita Ghasemi
Jakub Ševčík
Vojtěch Nádaždy
Karol Végsö
Peter Šiffalovič
Pavel Urbánek
Ivo Kuřitka
Thickness Dependence of Electronic Structure and Optical Properties of F8BT Thin Films
Polymers
F8BT
thin films
chain ordering
J- and H-aggregates
ER-EIS
title Thickness Dependence of Electronic Structure and Optical Properties of F8BT Thin Films
title_full Thickness Dependence of Electronic Structure and Optical Properties of F8BT Thin Films
title_fullStr Thickness Dependence of Electronic Structure and Optical Properties of F8BT Thin Films
title_full_unstemmed Thickness Dependence of Electronic Structure and Optical Properties of F8BT Thin Films
title_short Thickness Dependence of Electronic Structure and Optical Properties of F8BT Thin Films
title_sort thickness dependence of electronic structure and optical properties of f8bt thin films
topic F8BT
thin films
chain ordering
J- and H-aggregates
ER-EIS
url https://www.mdpi.com/2073-4360/14/3/641
work_keys_str_mv AT bitaghasemi thicknessdependenceofelectronicstructureandopticalpropertiesoff8btthinfilms
AT jakubsevcik thicknessdependenceofelectronicstructureandopticalpropertiesoff8btthinfilms
AT vojtechnadazdy thicknessdependenceofelectronicstructureandopticalpropertiesoff8btthinfilms
AT karolvegso thicknessdependenceofelectronicstructureandopticalpropertiesoff8btthinfilms
AT petersiffalovic thicknessdependenceofelectronicstructureandopticalpropertiesoff8btthinfilms
AT pavelurbanek thicknessdependenceofelectronicstructureandopticalpropertiesoff8btthinfilms
AT ivokuritka thicknessdependenceofelectronicstructureandopticalpropertiesoff8btthinfilms