Response of Graphene Based Gated Nanodevices Exposed to THz Radiation
In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
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EDP Sciences
2015-01-01
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Series: | EPJ Web of Conferences |
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Online Access: | http://dx.doi.org/10.1051/epjconf/201510310003 |
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author | Fedorov G.E. Gaiduchenko I.A. Golikov A.D. Rybin M.G. Obraztsova E.D. Voronov B.M. Coquillat D. Diakonova N. Knap W. Goltsman G.N. |
author_facet | Fedorov G.E. Gaiduchenko I.A. Golikov A.D. Rybin M.G. Obraztsova E.D. Voronov B.M. Coquillat D. Diakonova N. Knap W. Goltsman G.N. |
author_sort | Fedorov G.E. |
collection | DOAJ |
description | In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
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institution | Directory Open Access Journal |
issn | 2100-014X |
language | English |
last_indexed | 2024-12-17T03:06:33Z |
publishDate | 2015-01-01 |
publisher | EDP Sciences |
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series | EPJ Web of Conferences |
spelling | doaj.art-6b0981561deb41d890187d0807dc54012022-12-21T22:05:56ZengEDP SciencesEPJ Web of Conferences2100-014X2015-01-011031000310.1051/epjconf/201510310003epjconf_iwqo2015_10003Response of Graphene Based Gated Nanodevices Exposed to THz RadiationFedorov G.E.0Gaiduchenko I.A.1Golikov A.D.2Rybin M.G.3Obraztsova E.D.4Voronov B.M.5Coquillat D.6Diakonova N.7Knap W.8Goltsman G.N.9Moscow State Pedagogical UniversityMoscow State Pedagogical UniversityMoscow State Pedagogical UniversityProkhorov General Physics Institute of the Russian Academy of SciencesProkhorov General Physics Institute of the Russian Academy of SciencesMoscow State Pedagogical UniversityLaboratoire Charles Coulomb UMR 5221, Université Montpellier 2Laboratoire Charles Coulomb UMR 5221, Université Montpellier 2Laboratoire Charles Coulomb UMR 5221, Université Montpellier 2National Research University Higher School of EconomyIn this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.http://dx.doi.org/10.1051/epjconf/201510310003grapheneterahertz radiationterahertz radiation detection |
spellingShingle | Fedorov G.E. Gaiduchenko I.A. Golikov A.D. Rybin M.G. Obraztsova E.D. Voronov B.M. Coquillat D. Diakonova N. Knap W. Goltsman G.N. Response of Graphene Based Gated Nanodevices Exposed to THz Radiation EPJ Web of Conferences graphene terahertz radiation terahertz radiation detection |
title | Response of Graphene Based Gated Nanodevices Exposed to THz Radiation |
title_full | Response of Graphene Based Gated Nanodevices Exposed to THz Radiation |
title_fullStr | Response of Graphene Based Gated Nanodevices Exposed to THz Radiation |
title_full_unstemmed | Response of Graphene Based Gated Nanodevices Exposed to THz Radiation |
title_short | Response of Graphene Based Gated Nanodevices Exposed to THz Radiation |
title_sort | response of graphene based gated nanodevices exposed to thz radiation |
topic | graphene terahertz radiation terahertz radiation detection |
url | http://dx.doi.org/10.1051/epjconf/201510310003 |
work_keys_str_mv | AT fedorovge responseofgraphenebasedgatednanodevicesexposedtothzradiation AT gaiduchenkoia responseofgraphenebasedgatednanodevicesexposedtothzradiation AT golikovad responseofgraphenebasedgatednanodevicesexposedtothzradiation AT rybinmg responseofgraphenebasedgatednanodevicesexposedtothzradiation AT obraztsovaed responseofgraphenebasedgatednanodevicesexposedtothzradiation AT voronovbm responseofgraphenebasedgatednanodevicesexposedtothzradiation AT coquillatd responseofgraphenebasedgatednanodevicesexposedtothzradiation AT diakonovan responseofgraphenebasedgatednanodevicesexposedtothzradiation AT knapw responseofgraphenebasedgatednanodevicesexposedtothzradiation AT goltsmangn responseofgraphenebasedgatednanodevicesexposedtothzradiation |