Response of Graphene Based Gated Nanodevices Exposed to THz Radiation

In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is...

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Main Authors: Fedorov G.E., Gaiduchenko I.A., Golikov A.D., Rybin M.G., Obraztsova E.D., Voronov B.M., Coquillat D., Diakonova N., Knap W., Goltsman G.N.
Format: Article
Language:English
Published: EDP Sciences 2015-01-01
Series:EPJ Web of Conferences
Subjects:
Online Access:http://dx.doi.org/10.1051/epjconf/201510310003
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author Fedorov G.E.
Gaiduchenko I.A.
Golikov A.D.
Rybin M.G.
Obraztsova E.D.
Voronov B.M.
Coquillat D.
Diakonova N.
Knap W.
Goltsman G.N.
author_facet Fedorov G.E.
Gaiduchenko I.A.
Golikov A.D.
Rybin M.G.
Obraztsova E.D.
Voronov B.M.
Coquillat D.
Diakonova N.
Knap W.
Goltsman G.N.
author_sort Fedorov G.E.
collection DOAJ
description In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
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spelling doaj.art-6b0981561deb41d890187d0807dc54012022-12-21T22:05:56ZengEDP SciencesEPJ Web of Conferences2100-014X2015-01-011031000310.1051/epjconf/201510310003epjconf_iwqo2015_10003Response of Graphene Based Gated Nanodevices Exposed to THz RadiationFedorov G.E.0Gaiduchenko I.A.1Golikov A.D.2Rybin M.G.3Obraztsova E.D.4Voronov B.M.5Coquillat D.6Diakonova N.7Knap W.8Goltsman G.N.9Moscow State Pedagogical UniversityMoscow State Pedagogical UniversityMoscow State Pedagogical UniversityProkhorov General Physics Institute of the Russian Academy of SciencesProkhorov General Physics Institute of the Russian Academy of SciencesMoscow State Pedagogical UniversityLaboratoire Charles Coulomb UMR 5221, Université Montpellier 2Laboratoire Charles Coulomb UMR 5221, Université Montpellier 2Laboratoire Charles Coulomb UMR 5221, Université Montpellier 2National Research University Higher School of EconomyIn this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.http://dx.doi.org/10.1051/epjconf/201510310003grapheneterahertz radiationterahertz radiation detection
spellingShingle Fedorov G.E.
Gaiduchenko I.A.
Golikov A.D.
Rybin M.G.
Obraztsova E.D.
Voronov B.M.
Coquillat D.
Diakonova N.
Knap W.
Goltsman G.N.
Response of Graphene Based Gated Nanodevices Exposed to THz Radiation
EPJ Web of Conferences
graphene
terahertz radiation
terahertz radiation detection
title Response of Graphene Based Gated Nanodevices Exposed to THz Radiation
title_full Response of Graphene Based Gated Nanodevices Exposed to THz Radiation
title_fullStr Response of Graphene Based Gated Nanodevices Exposed to THz Radiation
title_full_unstemmed Response of Graphene Based Gated Nanodevices Exposed to THz Radiation
title_short Response of Graphene Based Gated Nanodevices Exposed to THz Radiation
title_sort response of graphene based gated nanodevices exposed to thz radiation
topic graphene
terahertz radiation
terahertz radiation detection
url http://dx.doi.org/10.1051/epjconf/201510310003
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