Response of Graphene Based Gated Nanodevices Exposed to THz Radiation

Response of Graphene Based Gated Nanodevices Exposed to THz Radiation

In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is...

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Bibliographic Details
Main Authors: Fedorov G.E., Gaiduchenko I.A., Golikov A.D., Rybin M.G., Obraztsova E.D., Voronov B.M., Coquillat D., Diakonova N., Knap W., Goltsman G.N.
Format: Article
Language:English
Published: EDP Sciences 2015-01-01
Series:EPJ Web of Conferences
Subjects:
graphene
terahertz radiation
terahertz radiation detection
Online Access:http://dx.doi.org/10.1051/epjconf/201510310003

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