Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates
It was studied the effect of irradiation with high-energy (10 MeV) electrons on the optical properties of nanocrystalline carbide film system silicon / sapphire substrates in a wide range of fluences of 5·1014 to 2·1020 cm–2 and subsequent annealing in vacuum in the range of 200—1200°C. It was found...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2017-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2017/3_2017/pdf/07.pdf |
| _version_ | 1818529112701009920 |
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| author | Semenov A. V. Lopin A. V. Boriskin V. N. |
| author_facet | Semenov A. V. Lopin A. V. Boriskin V. N. |
| author_sort | Semenov A. V. |
| collection | DOAJ |
| description | It was studied the effect of irradiation with high-energy (10 MeV) electrons on the optical properties of nanocrystalline carbide film system silicon / sapphire substrates in a wide range of fluences of 5·1014 to 2·1020 cm–2 and subsequent annealing in vacuum in the range of 200—1200°C. It was found that radiation-induced changes in the optical properties of nc SiC films is primarily manifested in the UV region of the spectrum associated with interband transitions, as well as in the region of the spectrum due to the absorption of intrinsic defects and disordered regions. It was established in the beginning of the annealing of defects in irradiated films has been observed at 200°C, which indicates the high concentration of carbon vacancies with the lowest activation energy. Significant changes in the optical properties of sapphire begin at fluence 5·1017 cm–2, which should be considered when using these materials under conditions of intense radiation impact. |
| first_indexed | 2024-12-11T06:58:54Z |
| format | Article |
| id | doaj.art-6b0ea71d697b4647a4cdea79a227711c |
| institution | Directory Open Access Journal |
| issn | 2225-5818 2309-9992 |
| language | English |
| last_indexed | 2024-12-11T06:58:54Z |
| publishDate | 2017-06-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj.art-6b0ea71d697b4647a4cdea79a227711c2022-12-22T01:16:39ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182309-99922017-06-013404810.15222/TKEA2017.3.40Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substratesSemenov A. V.0Lopin A. V.1Boriskin V. N. 2Ukraine, Kharkiv, Institute for Single Crystals of NASU, NTU «Kharkiv Polytechnic Institute»Ukraine, Kharkiv, Institute for Single Crystals of NASUUkraine, Kharkiv, National Scientific Center «Kharkov Institute of Physics & Technology» of NASUIt was studied the effect of irradiation with high-energy (10 MeV) electrons on the optical properties of nanocrystalline carbide film system silicon / sapphire substrates in a wide range of fluences of 5·1014 to 2·1020 cm–2 and subsequent annealing in vacuum in the range of 200—1200°C. It was found that radiation-induced changes in the optical properties of nc SiC films is primarily manifested in the UV region of the spectrum associated with interband transitions, as well as in the region of the spectrum due to the absorption of intrinsic defects and disordered regions. It was established in the beginning of the annealing of defects in irradiated films has been observed at 200°C, which indicates the high concentration of carbon vacancies with the lowest activation energy. Significant changes in the optical properties of sapphire begin at fluence 5·1017 cm–2, which should be considered when using these materials under conditions of intense radiation impact.http://www.tkea.com.ua/tkea/2017/3_2017/pdf/07.pdfnanocrystalline SiC filmsAl2O3 single crystalsabsorption spectraelectron irradiationradiation defectsradiation orderingannealing of defects |
| spellingShingle | Semenov A. V. Lopin A. V. Boriskin V. N. Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates Tekhnologiya i Konstruirovanie v Elektronnoi Apparature nanocrystalline SiC films Al2O3 single crystals absorption spectra electron irradiation radiation defects radiation ordering annealing of defects |
| title | Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates |
| title_full | Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates |
| title_fullStr | Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates |
| title_full_unstemmed | Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates |
| title_short | Effect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates |
| title_sort | effect of electron irradiation on the optical properties of nanocrystalline sic films on single crystal al2o3 substrates |
| topic | nanocrystalline SiC films Al2O3 single crystals absorption spectra electron irradiation radiation defects radiation ordering annealing of defects |
| url | http://www.tkea.com.ua/tkea/2017/3_2017/pdf/07.pdf |
| work_keys_str_mv | AT semenovav effectofelectronirradiationontheopticalpropertiesofnanocrystallinesicfilmsonsinglecrystalal2o3substrates AT lopinav effectofelectronirradiationontheopticalpropertiesofnanocrystallinesicfilmsonsinglecrystalal2o3substrates AT boriskinvn effectofelectronirradiationontheopticalpropertiesofnanocrystallinesicfilmsonsinglecrystalal2o3substrates |