Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires
Time resolved and time-integrated photoluminescence (PL) spectroscopy is used to investigate the trapping and thermal activation dynamics of excitons bound to single twin defects in individual GaAs–AlGaAs core–shell nanowires. The GaAs core exhibits two distinct spectral emission features that are a...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2013-01-01
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| Series: | New Journal of Physics |
| Online Access: | https://doi.org/10.1088/1367-2630/15/11/113032 |
| _version_ | 1827874461834018816 |
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| author | Daniel Rudolph Lucas Schweickert Stefanie Morkötter Lukas Hanschke Simon Hertenberger Max Bichler Gregor Koblmüller Gerhard Abstreiter Jonathan J Finley |
| author_facet | Daniel Rudolph Lucas Schweickert Stefanie Morkötter Lukas Hanschke Simon Hertenberger Max Bichler Gregor Koblmüller Gerhard Abstreiter Jonathan J Finley |
| author_sort | Daniel Rudolph |
| collection | DOAJ |
| description | Time resolved and time-integrated photoluminescence (PL) spectroscopy is used to investigate the trapping and thermal activation dynamics of excitons bound to single twin defects in individual GaAs–AlGaAs core–shell nanowires. The GaAs core exhibits two distinct spectral emission features that are attributed to free and bound excitons. Time resolved measurements reveal lifetimes of $\tau _{{\rm{FE}}} \sim 1.4 \,{\rm{ns}}$ and $\tau _{{\rm{BE}}} \sim 4.0 \,{\rm{ns}}$ for the free and bound excitons, respectively. For temperatures above 30 K, the global PL intensity is quenched due to non-radiative carrier recombination. In contrast, for temperatures below 20 K we observe clear evidence for thermal detrapping of bound excitons into the continuum. By comparing the time-resolved PL spectra with a two-level rate equation model, quantitative values are obtained for both the exciton trapping and detrapping rates. Our data is consistent with a temperature independent exciton trapping rate >20 GHz that dominates the population dynamics of bound excitons at T = 6 K. At elevated temperature, the detrapping rate is found to adhere to a thermally activated behavior characterized by a thermal activation energy of $E_{\rm{A}} = 5.8 \pm 1.0 \,{\rm{meV}}$ , very close to the energy spacing of bound and free exciton emission features. This observation implies that bound excitons are thermally activated into the excitonic continuum without the need to overcome additional energetic barriers. |
| first_indexed | 2024-03-12T16:52:37Z |
| format | Article |
| id | doaj.art-6b2fc2d589974d9a811b4a5dce8a9c5a |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:52:37Z |
| publishDate | 2013-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-6b2fc2d589974d9a811b4a5dce8a9c5a2023-08-08T11:04:58ZengIOP PublishingNew Journal of Physics1367-26302013-01-01151111303210.1088/1367-2630/15/11/113032Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowiresDaniel Rudolph0Lucas Schweickert1Stefanie Morkötter2Lukas Hanschke3Simon Hertenberger4Max Bichler5Gregor Koblmüller6Gerhard Abstreiter7Jonathan J Finley8Physik Department, and Center of Nanotechnology and Nanomaterials, Walter Schottky Institut, Technische Universität München , Garching D-85748, GermanyPhysik Department, and Center of Nanotechnology and Nanomaterials, Walter Schottky Institut, Technische Universität München , Garching D-85748, GermanyPhysik Department, and Center of Nanotechnology and Nanomaterials, Walter Schottky Institut, Technische Universität München , Garching D-85748, GermanyPhysik Department, and Center of Nanotechnology and Nanomaterials, Walter Schottky Institut, Technische Universität München , Garching D-85748, GermanyPhysik Department, and Center of Nanotechnology and Nanomaterials, Walter Schottky Institut, Technische Universität München , Garching D-85748, GermanyPhysik Department, and Center of Nanotechnology and Nanomaterials, Walter Schottky Institut, Technische Universität München , Garching D-85748, GermanyPhysik Department, and Center of Nanotechnology and Nanomaterials, Walter Schottky Institut, Technische Universität München , Garching D-85748, GermanyPhysik Department, and Center of Nanotechnology and Nanomaterials, Walter Schottky Institut, Technische Universität München , Garching D-85748, Germany; Institute for Advanced Study, Technische Universität München , Garching D-85748, GermanyPhysik Department, and Center of Nanotechnology and Nanomaterials, Walter Schottky Institut, Technische Universität München , Garching D-85748, GermanyTime resolved and time-integrated photoluminescence (PL) spectroscopy is used to investigate the trapping and thermal activation dynamics of excitons bound to single twin defects in individual GaAs–AlGaAs core–shell nanowires. The GaAs core exhibits two distinct spectral emission features that are attributed to free and bound excitons. Time resolved measurements reveal lifetimes of $\tau _{{\rm{FE}}} \sim 1.4 \,{\rm{ns}}$ and $\tau _{{\rm{BE}}} \sim 4.0 \,{\rm{ns}}$ for the free and bound excitons, respectively. For temperatures above 30 K, the global PL intensity is quenched due to non-radiative carrier recombination. In contrast, for temperatures below 20 K we observe clear evidence for thermal detrapping of bound excitons into the continuum. By comparing the time-resolved PL spectra with a two-level rate equation model, quantitative values are obtained for both the exciton trapping and detrapping rates. Our data is consistent with a temperature independent exciton trapping rate >20 GHz that dominates the population dynamics of bound excitons at T = 6 K. At elevated temperature, the detrapping rate is found to adhere to a thermally activated behavior characterized by a thermal activation energy of $E_{\rm{A}} = 5.8 \pm 1.0 \,{\rm{meV}}$ , very close to the energy spacing of bound and free exciton emission features. This observation implies that bound excitons are thermally activated into the excitonic continuum without the need to overcome additional energetic barriers.https://doi.org/10.1088/1367-2630/15/11/113032 |
| spellingShingle | Daniel Rudolph Lucas Schweickert Stefanie Morkötter Lukas Hanschke Simon Hertenberger Max Bichler Gregor Koblmüller Gerhard Abstreiter Jonathan J Finley Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires New Journal of Physics |
| title | Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires |
| title_full | Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires |
| title_fullStr | Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires |
| title_full_unstemmed | Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires |
| title_short | Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires |
| title_sort | probing the trapping and thermal activation dynamics of excitons at single twin defects in gaas algaas core shell nanowires |
| url | https://doi.org/10.1088/1367-2630/15/11/113032 |
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