The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory Device
This study discusses the potential application of ITO/ZnO/HfO<sub>x</sub>/W bilayer-structured memory devices in neuromorphic systems. These devices exhibit uniform resistive switching characteristics and demonstrate favorable endurance (>10<sup>2</sup>) and stable retenti...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/21/2856 |
| _version_ | 1797631495296253952 |
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| author | Minseo Noh Dongyeol Ju Seongjae Cho Sungjun Kim |
| author_facet | Minseo Noh Dongyeol Ju Seongjae Cho Sungjun Kim |
| author_sort | Minseo Noh |
| collection | DOAJ |
| description | This study discusses the potential application of ITO/ZnO/HfO<sub>x</sub>/W bilayer-structured memory devices in neuromorphic systems. These devices exhibit uniform resistive switching characteristics and demonstrate favorable endurance (>10<sup>2</sup>) and stable retention (>10<sup>4</sup> s). Notably, the formation and rupture of filaments at the interface of ZnO and HfO<sub>x</sub> contribute to a higher ON/OFF ratio and improve cycle uniformity compared to RRAM devices without the HfO<sub>x</sub> layer. Additionally, the linearity of potentiation and depression responses validates their applicability in neural network pattern recognition, and spike-timing-dependent plasticity (STDP) behavior is observed. These findings collectively suggest that the ITO/ZnO/HfO<sub>x</sub>/W structure holds the potential to be a viable memory component for integration into neuromorphic systems. |
| first_indexed | 2024-03-11T11:24:20Z |
| format | Article |
| id | doaj.art-6b43a4dd3ed544879e5db07b07e32e8d |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T11:24:20Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-6b43a4dd3ed544879e5db07b07e32e8d2023-11-10T15:09:11ZengMDPI AGNanomaterials2079-49912023-10-011321285610.3390/nano13212856The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory DeviceMinseo Noh0Dongyeol Ju1Seongjae Cho2Sungjun Kim3Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of KoreaDepartment of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Republic of KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of KoreaThis study discusses the potential application of ITO/ZnO/HfO<sub>x</sub>/W bilayer-structured memory devices in neuromorphic systems. These devices exhibit uniform resistive switching characteristics and demonstrate favorable endurance (>10<sup>2</sup>) and stable retention (>10<sup>4</sup> s). Notably, the formation and rupture of filaments at the interface of ZnO and HfO<sub>x</sub> contribute to a higher ON/OFF ratio and improve cycle uniformity compared to RRAM devices without the HfO<sub>x</sub> layer. Additionally, the linearity of potentiation and depression responses validates their applicability in neural network pattern recognition, and spike-timing-dependent plasticity (STDP) behavior is observed. These findings collectively suggest that the ITO/ZnO/HfO<sub>x</sub>/W structure holds the potential to be a viable memory component for integration into neuromorphic systems.https://www.mdpi.com/2079-4991/13/21/2856neuromorphic systemresistive switchingZnOspike-timing-dependent plasticity |
| spellingShingle | Minseo Noh Dongyeol Ju Seongjae Cho Sungjun Kim The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory Device Nanomaterials neuromorphic system resistive switching ZnO spike-timing-dependent plasticity |
| title | The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory Device |
| title_full | The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory Device |
| title_fullStr | The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory Device |
| title_full_unstemmed | The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory Device |
| title_short | The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO<sub>x</sub>/W Bilayer-Structured Memory Device |
| title_sort | enhanced performance of neuromorphic computing hardware in an ito zno hfo sub x sub w bilayer structured memory device |
| topic | neuromorphic system resistive switching ZnO spike-timing-dependent plasticity |
| url | https://www.mdpi.com/2079-4991/13/21/2856 |
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