Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates
Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3<...
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MDPI AG
2021-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/2/291 |
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| author | Vladimir P. Popov Fedor V. Tikhonenko Valentin A. Antonov Ida E. Tyschenko Andrey V. Miakonkikh Sergey G. Simakin Konstantin V. Rudenko |
| author_facet | Vladimir P. Popov Fedor V. Tikhonenko Valentin A. Antonov Ida E. Tyschenko Andrey V. Miakonkikh Sergey G. Simakin Konstantin V. Rudenko |
| author_sort | Vladimir P. Popov |
| collection | DOAJ |
| description | Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>… nanolayers with a highest rectification coefficient 10<sup>3</sup> are observed and explained by the asymmetry of the upper and lower heterointerfaces formed by bonding and ALD processes. As a result, different spatial charge regions (SCRs) are formed on both insulator sides. The lowest leakages are observed through the stacks, with total Al<sub>2</sub>O<sub>3</sub> thickness values of 8–10 nm, which also provide a diffusive barrier for hydrogen. The dominant mechanism of electron transport through the built-in insulator at the weak field E < 1 MV/cm is thermionic emission. The Poole-Frenkel (PF) mechanism of emission from traps dominates at larger E values. The charge carriers mobility 100–120 cm<sup>2</sup>/(V s) and interface states (IFS) density 1.2 × 10<sup>11</sup> cm<sup>−2</sup> are obtained for the n-p SIS structures with insulator HfO<sub>2</sub>:Al<sub>2</sub>O<sub>3</sub> (10:1) after rapid thermal annealing (RTA) at 800 °C. The drain current hysteresis of pseudo-metal-oxide-semiconductor field effect transistor (MOSFET) with the memory window 1.2–1.3 V at the gate voltage |V<sub>g</sub>| < ±2.5 V is maintained in the RTA treatment at T = 800–900 °C for these transistors. |
| first_indexed | 2024-03-09T03:54:28Z |
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| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T03:54:28Z |
| publishDate | 2021-01-01 |
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| series | Nanomaterials |
| spelling | doaj.art-6b918bbffc3c4ae8a673b38a461c32e62023-12-03T14:22:26ZengMDPI AGNanomaterials2079-49912021-01-0111229110.3390/nano11020291Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina NanolaminatesVladimir P. Popov0Fedor V. Tikhonenko1Valentin A. Antonov2Ida E. Tyschenko3Andrey V. Miakonkikh4Sergey G. Simakin5Konstantin V. Rudenko6Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk, RussiaValiev Institute of Physics and Technology RAS, 117218 Moscow, RussiaValiev Institute of Physics and Technology RAS, 117218 Moscow, RussiaValiev Institute of Physics and Technology RAS, 117218 Moscow, RussiaSilicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>… nanolayers with a highest rectification coefficient 10<sup>3</sup> are observed and explained by the asymmetry of the upper and lower heterointerfaces formed by bonding and ALD processes. As a result, different spatial charge regions (SCRs) are formed on both insulator sides. The lowest leakages are observed through the stacks, with total Al<sub>2</sub>O<sub>3</sub> thickness values of 8–10 nm, which also provide a diffusive barrier for hydrogen. The dominant mechanism of electron transport through the built-in insulator at the weak field E < 1 MV/cm is thermionic emission. The Poole-Frenkel (PF) mechanism of emission from traps dominates at larger E values. The charge carriers mobility 100–120 cm<sup>2</sup>/(V s) and interface states (IFS) density 1.2 × 10<sup>11</sup> cm<sup>−2</sup> are obtained for the n-p SIS structures with insulator HfO<sub>2</sub>:Al<sub>2</sub>O<sub>3</sub> (10:1) after rapid thermal annealing (RTA) at 800 °C. The drain current hysteresis of pseudo-metal-oxide-semiconductor field effect transistor (MOSFET) with the memory window 1.2–1.3 V at the gate voltage |V<sub>g</sub>| < ±2.5 V is maintained in the RTA treatment at T = 800–900 °C for these transistors.https://www.mdpi.com/2079-4991/11/2/291SIS structuressilicon-on-ferroelectricdiode and FET characteristicsleakage mechanismsferroelectric hysteresis |
| spellingShingle | Vladimir P. Popov Fedor V. Tikhonenko Valentin A. Antonov Ida E. Tyschenko Andrey V. Miakonkikh Sergey G. Simakin Konstantin V. Rudenko Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates Nanomaterials SIS structures silicon-on-ferroelectric diode and FET characteristics leakage mechanisms ferroelectric hysteresis |
| title | Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates |
| title_full | Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates |
| title_fullStr | Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates |
| title_full_unstemmed | Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates |
| title_short | Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates |
| title_sort | diode like current leakage and ferroelectric switching in silicon sis structures with hafnia alumina nanolaminates |
| topic | SIS structures silicon-on-ferroelectric diode and FET characteristics leakage mechanisms ferroelectric hysteresis |
| url | https://www.mdpi.com/2079-4991/11/2/291 |
| work_keys_str_mv | AT vladimirppopov diodelikecurrentleakageandferroelectricswitchinginsiliconsisstructureswithhafniaaluminananolaminates AT fedorvtikhonenko diodelikecurrentleakageandferroelectricswitchinginsiliconsisstructureswithhafniaaluminananolaminates AT valentinaantonov diodelikecurrentleakageandferroelectricswitchinginsiliconsisstructureswithhafniaaluminananolaminates AT idaetyschenko diodelikecurrentleakageandferroelectricswitchinginsiliconsisstructureswithhafniaaluminananolaminates AT andreyvmiakonkikh diodelikecurrentleakageandferroelectricswitchinginsiliconsisstructureswithhafniaaluminananolaminates AT sergeygsimakin diodelikecurrentleakageandferroelectricswitchinginsiliconsisstructureswithhafniaaluminananolaminates AT konstantinvrudenko diodelikecurrentleakageandferroelectricswitchinginsiliconsisstructureswithhafniaaluminananolaminates |