An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate Phototransistors
Optoelectronic synapses integrating sensing–memory–processing functions have great advantages in neuromorphic computing for visual information processing and complex learning, recognition, and memory in an energy‐efficient manner. Herein, a light‐induced bidirectional response is demonstrated in the...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-07-01
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| Series: | Advanced Intelligent Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aisy.202200328 |
| _version_ | 1797773146344914944 |
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| author | Bo Wang Yichi Zhang Jie You Maolong Yang Zhao Han Dongdong Lin Maliang Liu Ningning Zhang Zuimin Jiang Hui Guo Jincheng Zhang Liming Wang Huiyong Hu |
| author_facet | Bo Wang Yichi Zhang Jie You Maolong Yang Zhao Han Dongdong Lin Maliang Liu Ningning Zhang Zuimin Jiang Hui Guo Jincheng Zhang Liming Wang Huiyong Hu |
| author_sort | Bo Wang |
| collection | DOAJ |
| description | Optoelectronic synapses integrating sensing–memory–processing functions have great advantages in neuromorphic computing for visual information processing and complex learning, recognition, and memory in an energy‐efficient manner. Herein, a light‐induced bidirectional response is demonstrated in the proposed WSe2/MoS2 junction field‐effect transistor (JFET) with an extra Ge back gate. The WSe2/MoS2 JFET exhibits high responsivity and detectivity owing to effective modulation by the top junction and back dielectric gates. The unique bidirectional photoresponse and interfacial state storage properties of the device result in significant synaptic excitatory effects under visible light stimulation and remarkable synaptic inhibitory effects under infrared illumination. Optical storage with visible light and optical erasure with infrared light can be achieved in the device based on its synaptic behavior. The conductance changes under different types of illumination can be used to mimic the weight update in a neural network for image recognition. A high accuracy exceeding 98% was achieved in handwritten digit recognition. This visible and infrared dual‐band phototransistor, which integrates image perception, memory, and recognition functionalities, provides a promising solution for self‐driving, surveillance, computer vision, and biomedical imaging applications. |
| first_indexed | 2024-03-12T22:02:05Z |
| format | Article |
| id | doaj.art-6ba19a5847eb4392a95cceb7a7cfe2bd |
| institution | Directory Open Access Journal |
| issn | 2640-4567 |
| language | English |
| last_indexed | 2024-03-12T22:02:05Z |
| publishDate | 2023-07-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Intelligent Systems |
| spelling | doaj.art-6ba19a5847eb4392a95cceb7a7cfe2bd2023-07-25T05:32:26ZengWileyAdvanced Intelligent Systems2640-45672023-07-0157n/an/a10.1002/aisy.202200328An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate PhototransistorsBo Wang0Yichi Zhang1Jie You2Maolong Yang3Zhao Han4Dongdong Lin5Maliang Liu6Ningning Zhang7Zuimin Jiang8Hui Guo9Jincheng Zhang10Liming Wang11Huiyong Hu12Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaQian Xuesen Collaborative Research Center of Astrochemistry and Space Life Sciences Department of Microelectronic Science and Engineering Ningbo University Ningbo 315211 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaDepartment of Physics Fudan University Shanghai 200433 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 ChinaOptoelectronic synapses integrating sensing–memory–processing functions have great advantages in neuromorphic computing for visual information processing and complex learning, recognition, and memory in an energy‐efficient manner. Herein, a light‐induced bidirectional response is demonstrated in the proposed WSe2/MoS2 junction field‐effect transistor (JFET) with an extra Ge back gate. The WSe2/MoS2 JFET exhibits high responsivity and detectivity owing to effective modulation by the top junction and back dielectric gates. The unique bidirectional photoresponse and interfacial state storage properties of the device result in significant synaptic excitatory effects under visible light stimulation and remarkable synaptic inhibitory effects under infrared illumination. Optical storage with visible light and optical erasure with infrared light can be achieved in the device based on its synaptic behavior. The conductance changes under different types of illumination can be used to mimic the weight update in a neural network for image recognition. A high accuracy exceeding 98% was achieved in handwritten digit recognition. This visible and infrared dual‐band phototransistor, which integrates image perception, memory, and recognition functionalities, provides a promising solution for self‐driving, surveillance, computer vision, and biomedical imaging applications.https://doi.org/10.1002/aisy.202200328artificial visual unitdetection–memory–recognitiondual-band photodetectiondual-gate phototransistors |
| spellingShingle | Bo Wang Yichi Zhang Jie You Maolong Yang Zhao Han Dongdong Lin Maliang Liu Ningning Zhang Zuimin Jiang Hui Guo Jincheng Zhang Liming Wang Huiyong Hu An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate Phototransistors Advanced Intelligent Systems artificial visual unit detection–memory–recognition dual-band photodetection dual-gate phototransistors |
| title | An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate Phototransistors |
| title_full | An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate Phototransistors |
| title_fullStr | An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate Phototransistors |
| title_full_unstemmed | An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate Phototransistors |
| title_short | An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate Phototransistors |
| title_sort | image detection memory recognition artificial visual unit based on dual gate phototransistors |
| topic | artificial visual unit detection–memory–recognition dual-band photodetection dual-gate phototransistors |
| url | https://doi.org/10.1002/aisy.202200328 |
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