Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels
Micro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of large-area monolithic integration of multi-color InGaN micro-LEDs via pulsed sputtering deposition (PSD) and a standard photolithographical techniq...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-04-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/4/499 |
| _version_ | 1827621194493329408 |
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| author | Soichiro Morikawa Kohei Ueno Atsushi Kobayashi Hiroshi Fujioka |
| author_facet | Soichiro Morikawa Kohei Ueno Atsushi Kobayashi Hiroshi Fujioka |
| author_sort | Soichiro Morikawa |
| collection | DOAJ |
| description | Micro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of large-area monolithic integration of multi-color InGaN micro-LEDs via pulsed sputtering deposition (PSD) and a standard photolithographical technique. The PSD allows for sequential epitaxial growth of blue and green InGaN LED stacks connected with the GaN based tunneling junction. The tunneling junctions serve as protective layers on p-type GaN against the dry etching damage and hole injection layers in each blue and green emission InGaN active layer. The tunneling junction-connected multi-color InGaN LED stack contributes to the high-density and large-area monolithic integration of RGB micro-LEDs using standard photolithography and the ICP-dry etching method. |
| first_indexed | 2024-03-09T10:59:12Z |
| format | Article |
| id | doaj.art-6ba53a0a5464433c8f29c7859b15c143 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T10:59:12Z |
| publishDate | 2022-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-6ba53a0a5464433c8f29c7859b15c1432023-12-01T01:24:40ZengMDPI AGCrystals2073-43522022-04-0112449910.3390/cryst12040499Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED PixelsSoichiro Morikawa0Kohei Ueno1Atsushi Kobayashi2Hiroshi Fujioka3Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanMicro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of large-area monolithic integration of multi-color InGaN micro-LEDs via pulsed sputtering deposition (PSD) and a standard photolithographical technique. The PSD allows for sequential epitaxial growth of blue and green InGaN LED stacks connected with the GaN based tunneling junction. The tunneling junctions serve as protective layers on p-type GaN against the dry etching damage and hole injection layers in each blue and green emission InGaN active layer. The tunneling junction-connected multi-color InGaN LED stack contributes to the high-density and large-area monolithic integration of RGB micro-LEDs using standard photolithography and the ICP-dry etching method.https://www.mdpi.com/2073-4352/12/4/499InGaNLEDsputteringtunneling junction |
| spellingShingle | Soichiro Morikawa Kohei Ueno Atsushi Kobayashi Hiroshi Fujioka Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels Crystals InGaN LED sputtering tunneling junction |
| title | Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels |
| title_full | Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels |
| title_fullStr | Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels |
| title_full_unstemmed | Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels |
| title_short | Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels |
| title_sort | pulsed sputtering preparation of ingan multi color cascaded led stacks for large area monolithic integration of rgb led pixels |
| topic | InGaN LED sputtering tunneling junction |
| url | https://www.mdpi.com/2073-4352/12/4/499 |
| work_keys_str_mv | AT soichiromorikawa pulsedsputteringpreparationofinganmulticolorcascadedledstacksforlargeareamonolithicintegrationofrgbledpixels AT koheiueno pulsedsputteringpreparationofinganmulticolorcascadedledstacksforlargeareamonolithicintegrationofrgbledpixels AT atsushikobayashi pulsedsputteringpreparationofinganmulticolorcascadedledstacksforlargeareamonolithicintegrationofrgbledpixels AT hiroshifujioka pulsedsputteringpreparationofinganmulticolorcascadedledstacksforlargeareamonolithicintegrationofrgbledpixels |