Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method

Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method

As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system, a steady state is used to compute the tempera...

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Bibliographic Details
Main Authors: Xia Tang, Botao Liu, Yue Yu, Botao Song, Pengfei Han, Sheng Liu, Bing Gao
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Crystals
Subjects:
computer simulation
radiation
bulk β-Ga<sub>2</sub>O<sub>3</sub> growth
Online Access:https://www.mdpi.com/2073-4352/11/7/763

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