Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates
The paper presents the results of numerical simulation of the heterostructural diodes operation based on the array of indium arsenide nanowires on the silicon substrates with different polarities, namely n- or p-types. It has been found that it is possible to achieve theoretical values of the ideali...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Peter the Great St.Petersburg Polytechnic University
2024-03-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2024.71.04/ |
| _version_ | 1827288964834263040 |
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| author | Dvoretckaia Liliya Mozharov Alexey Goltaev Aleksandr Fedorov Vladimir Mukhin Ivan |
| author_facet | Dvoretckaia Liliya Mozharov Alexey Goltaev Aleksandr Fedorov Vladimir Mukhin Ivan |
| author_sort | Dvoretckaia Liliya |
| collection | DOAJ |
| description | The paper presents the results of numerical simulation of the heterostructural diodes operation based on the array of indium arsenide nanowires on the silicon substrates with different polarities, namely n- or p-types. It has been found that it is possible to achieve theoretical values of the ideality factor equal to 1.1 and 2.1 respectively. The high quantum efficiency values are typical for the investigated heterostructures during separation of photogenerated charge carriers in the temperature range of 150–300 K. |
| first_indexed | 2024-04-24T11:41:39Z |
| format | Article |
| id | doaj.art-6bf34970191b41b08c5fcfa9d66f5db9 |
| institution | Directory Open Access Journal |
| issn | 2405-7223 |
| language | English |
| last_indexed | 2024-04-24T11:41:39Z |
| publishDate | 2024-03-01 |
| publisher | Peter the Great St.Petersburg Polytechnic University |
| record_format | Article |
| series | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| spelling | doaj.art-6bf34970191b41b08c5fcfa9d66f5db92024-04-09T20:08:55ZengPeter the Great St.Petersburg Polytechnic UniversitySt. Petersburg Polytechnical University Journal: Physics and Mathematics2405-72232024-03-0117110.18721/JPM.1710420714726Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substratesDvoretckaia Liliya0Mozharov Alexey1Goltaev Aleksandr2https://orcid.org/0000-0001-8179-3169Fedorov Vladimir3Mukhin Ivan4Alferov UniversityAlferov UniversityAlferov UniversityAlferov UniversityAlferov UniversityThe paper presents the results of numerical simulation of the heterostructural diodes operation based on the array of indium arsenide nanowires on the silicon substrates with different polarities, namely n- or p-types. It has been found that it is possible to achieve theoretical values of the ideality factor equal to 1.1 and 2.1 respectively. The high quantum efficiency values are typical for the investigated heterostructures during separation of photogenerated charge carriers in the temperature range of 150–300 K.https://physmath.spbstu.ru/article/2024.71.04/indium arsenidenanowireheterostructuresilicon substratenumerical calculation |
| spellingShingle | Dvoretckaia Liliya Mozharov Alexey Goltaev Aleksandr Fedorov Vladimir Mukhin Ivan Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates St. Petersburg Polytechnical University Journal: Physics and Mathematics indium arsenide nanowire heterostructure silicon substrate numerical calculation |
| title | Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates |
| title_full | Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates |
| title_fullStr | Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates |
| title_full_unstemmed | Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates |
| title_short | Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates |
| title_sort | numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates |
| topic | indium arsenide nanowire heterostructure silicon substrate numerical calculation |
| url | https://physmath.spbstu.ru/article/2024.71.04/ |
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