Investigation of anomalous diffusion of aluminum into silicon

Investigation of anomalous diffusion of aluminum into silicon

The process of Al diffusion into silicon substrate of an integrated circuit is studied experimentally and theoretically in details in order to analyze the invariance of the diffusion mechanism according to the Arrhenius law. During the process of practical investigation of the aluminum admixture wit...

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Bibliographic Details
Main Authors: Alexey V. Bespalov, Mikhail S. Afanasyev, Olga L. Golikova, Igor A. Kharitonov, Alexandra A. Muravyeva
Format: Article
Language:English
Published: Joint Stock Company "Experimental Scientific and Production Association SPELS 2023-05-01
Series:Безопасность информационных технологий
Subjects:
diffusion of aluminum into silicon, anomalous diffusion, diffusion mechanism, arrhenius law, annealing, dielectric, mechanical stress, reliability.
Online Access:https://bit.spels.ru/index.php/bit/article/view/1510

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