Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes

Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes

An environment-friendly inverted indium phosphide red quantum dot light-emitting diode (InP QLED) was fabricated using Mg-doped zinc oxide (ZnMgO) as the electron transport layer (ETL). The effects of ZnMgO ETL on the performance of InP QLED were investigated. X-ray diffraction (XRD) analysis indica...

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Bibliographic Details
Main Authors: Binbin Zhang, Yu Luo, Chaohuang Mai, Lan Mu, Miaozi Li, Junjie Wang, Wei Xu, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Nanomaterials
Subjects:
Mg-doped zinc oxide
InP
QLED
electron transport layer
energy band
Online Access:https://www.mdpi.com/2079-4991/11/5/1246

Internet

https://www.mdpi.com/2079-4991/11/5/1246

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