Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption
We investigated the ellipsometer-based characterization method being used to quickly evaluate the depth of the damage layer in ion-implanted 4H-SiC. This method had the advantages of low cost, convenience, and non-destructiveness. Optical absorption of n-type 4H-SiC substrate, P<sup>+</sup&...
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| Format: | Article |
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MDPI AG
2022-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/5/804 |
| _version_ | 1797497773215449088 |
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| author | Jingmin Wu Xiang Yang Fengxuan Wang Zhiyu Guo Zhongchao Fan Zhi He Fuhua Yang |
| author_facet | Jingmin Wu Xiang Yang Fengxuan Wang Zhiyu Guo Zhongchao Fan Zhi He Fuhua Yang |
| author_sort | Jingmin Wu |
| collection | DOAJ |
| description | We investigated the ellipsometer-based characterization method being used to quickly evaluate the depth of the damage layer in ion-implanted 4H-SiC. This method had the advantages of low cost, convenience, and non-destructiveness. Optical absorption of n-type 4H-SiC substrate, P<sup>+</sup> ion-implanted, laser-annealed, and conventional high-temperature annealed wafers were investigated at room temperature. Three peaks were observed in the absorption spectra collected for various samples. The degree of electrical activation after laser annealing or high-temperature annealing was evaluated qualitatively from the absorption peak intensity at 2.67 eV. The circular transmission line method (CTLM) results were consistent with the optical absorption results. However, it was found that the effective carrier concentration after laser annealing was significantly lower than that after high-temperature annealing. |
| first_indexed | 2024-03-10T03:24:03Z |
| format | Article |
| id | doaj.art-6c20823f5e8e4163a009462da6e1dbe7 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T03:24:03Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-6c20823f5e8e4163a009462da6e1dbe72023-11-23T12:13:28ZengMDPI AGMicromachines2072-666X2022-05-0113580410.3390/mi13050804Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical AbsorptionJingmin Wu0Xiang Yang1Fengxuan Wang2Zhiyu Guo3Zhongchao Fan4Zhi He5Fuhua Yang6Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaEngineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaWe investigated the ellipsometer-based characterization method being used to quickly evaluate the depth of the damage layer in ion-implanted 4H-SiC. This method had the advantages of low cost, convenience, and non-destructiveness. Optical absorption of n-type 4H-SiC substrate, P<sup>+</sup> ion-implanted, laser-annealed, and conventional high-temperature annealed wafers were investigated at room temperature. Three peaks were observed in the absorption spectra collected for various samples. The degree of electrical activation after laser annealing or high-temperature annealing was evaluated qualitatively from the absorption peak intensity at 2.67 eV. The circular transmission line method (CTLM) results were consistent with the optical absorption results. However, it was found that the effective carrier concentration after laser annealing was significantly lower than that after high-temperature annealing.https://www.mdpi.com/2072-666X/13/5/804laser annealingthermal annealingP<sup>+</sup> ion implantationellipsometeroptical absorption |
| spellingShingle | Jingmin Wu Xiang Yang Fengxuan Wang Zhiyu Guo Zhongchao Fan Zhi He Fuhua Yang Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption Micromachines laser annealing thermal annealing P<sup>+</sup> ion implantation ellipsometer optical absorption |
| title | Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption |
| title_full | Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption |
| title_fullStr | Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption |
| title_full_unstemmed | Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption |
| title_short | Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption |
| title_sort | characteristics of activation rate and damage of ion implanted phosphorous in 4h sic after different annealing by optical absorption |
| topic | laser annealing thermal annealing P<sup>+</sup> ion implantation ellipsometer optical absorption |
| url | https://www.mdpi.com/2072-666X/13/5/804 |
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