Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption

Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption

We investigated the ellipsometer-based characterization method being used to quickly evaluate the depth of the damage layer in ion-implanted 4H-SiC. This method had the advantages of low cost, convenience, and non-destructiveness. Optical absorption of n-type 4H-SiC substrate, P<sup>+</sup&...

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Bibliographic Details
Main Authors: Jingmin Wu, Xiang Yang, Fengxuan Wang, Zhiyu Guo, Zhongchao Fan, Zhi He, Fuhua Yang
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Micromachines
Subjects:
laser annealing
thermal annealing
P<sup>+</sup> ion implantation
ellipsometer
optical absorption
Online Access:https://www.mdpi.com/2072-666X/13/5/804

Internet

https://www.mdpi.com/2072-666X/13/5/804

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