Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption
We investigated the ellipsometer-based characterization method being used to quickly evaluate the depth of the damage layer in ion-implanted 4H-SiC. This method had the advantages of low cost, convenience, and non-destructiveness. Optical absorption of n-type 4H-SiC substrate, P<sup>+</sup&...
Main Authors: | Jingmin Wu, Xiang Yang, Fengxuan Wang, Zhiyu Guo, Zhongchao Fan, Zhi He, Fuhua Yang |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-05-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/13/5/804 |
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