Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n Lamellae
Abstract The possibility to engineer (GeTe)m(Sb2Te3)n phase‐change materials to co‐host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel multifunctional devices. Here an experimental and theo...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2024-01-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202304785 |
| _version_ | 1797365294176403456 |
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| author | Stefano Cecchi Jamo Momand Daniele Dragoni Omar Abou El Kheir Federico Fagiani Dominik Kriegner Christian Rinaldi Fabrizio Arciprete Vaclav Holý Bart J. Kooi Marco Bernasconi Raffaella Calarco |
| author_facet | Stefano Cecchi Jamo Momand Daniele Dragoni Omar Abou El Kheir Federico Fagiani Dominik Kriegner Christian Rinaldi Fabrizio Arciprete Vaclav Holý Bart J. Kooi Marco Bernasconi Raffaella Calarco |
| author_sort | Stefano Cecchi |
| collection | DOAJ |
| description | Abstract The possibility to engineer (GeTe)m(Sb2Te3)n phase‐change materials to co‐host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel multifunctional devices. Here an experimental and theoretical study of epitaxial (GeTe)m(Sb2Te3)n with GeTe‐rich composition is presented. These layered films feature a tunable distribution of (GeTe)m(Sb2Te3)1 blocks of different sizes. Breakthrough evidence of ferroelectric displacement in thick (GeTe)m(Sb2Te3)1 lamellae is provided. The density functional theory calculations suggest the formation of a tilted (GeTe)m slab sandwiched in GeTe‐rich blocks. That is, the net ferroelectric polarization is confined almost in‐plane, representing an unprecedented case between 2D and bulk ferroelectric materials. The ferroelectric behavior is confirmed by piezoresponse force microscopy and electroresistive measurements. The resilience of the quasi van der Waals character of the films, regardless of their composition, is also demonstrated. Hence, the material developed hereby gathers in a unique 2D platform the phase‐change and ferroelectric switching properties, paving the way for the conception of innovative device architectures. |
| first_indexed | 2024-03-08T16:48:02Z |
| format | Article |
| id | doaj.art-6c238b86e2b44ab485a514f22d7305c6 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-08T16:48:02Z |
| publishDate | 2024-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-6c238b86e2b44ab485a514f22d7305c62024-01-05T08:26:58ZengWileyAdvanced Science2198-38442024-01-01111n/an/a10.1002/advs.202304785Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n LamellaeStefano Cecchi0Jamo Momand1Daniele Dragoni2Omar Abou El Kheir3Federico Fagiani4Dominik Kriegner5Christian Rinaldi6Fabrizio Arciprete7Vaclav Holý8Bart J. Kooi9Marco Bernasconi10Raffaella Calarco11Department of Materials Science University of Milano‐Bicocca via R. Cozzi 55 20125 Milano ItalyZernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The NetherlandsDepartment of Materials Science University of Milano‐Bicocca via R. Cozzi 55 20125 Milano ItalyDepartment of Materials Science University of Milano‐Bicocca via R. Cozzi 55 20125 Milano ItalyDipartimento di Fisica Politecnico di Milano P.zza Leonardo da Vinci 32 20133 Milano ItalyInstitute of Solid State and Materials Physics Technische Universität Dresden Helmholtzstr. 10 01069 Dresden GermanyDipartimento di Fisica Politecnico di Milano P.zza Leonardo da Vinci 32 20133 Milano ItalyDipartimento di Fisica Università di Roma “Tor Vergata” Via della Ricerca Scientifica 1 00133 Rome ItalyDepartment of Condensed Matter Physics Faculty of Mathematics and Physics Charles University, Ke Karlovu 5 12116 Praha Czech RepublicZernike Institute for Advanced Materials University of Groningen Nijenborgh 4 9747 AG Groningen The NetherlandsDepartment of Materials Science University of Milano‐Bicocca via R. Cozzi 55 20125 Milano ItalyPaul‐Drude‐Institut für Festkörperelektronik Leibniz‐Institut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5‐7 10117 Berlin GermanyAbstract The possibility to engineer (GeTe)m(Sb2Te3)n phase‐change materials to co‐host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel multifunctional devices. Here an experimental and theoretical study of epitaxial (GeTe)m(Sb2Te3)n with GeTe‐rich composition is presented. These layered films feature a tunable distribution of (GeTe)m(Sb2Te3)1 blocks of different sizes. Breakthrough evidence of ferroelectric displacement in thick (GeTe)m(Sb2Te3)1 lamellae is provided. The density functional theory calculations suggest the formation of a tilted (GeTe)m slab sandwiched in GeTe‐rich blocks. That is, the net ferroelectric polarization is confined almost in‐plane, representing an unprecedented case between 2D and bulk ferroelectric materials. The ferroelectric behavior is confirmed by piezoresponse force microscopy and electroresistive measurements. The resilience of the quasi van der Waals character of the films, regardless of their composition, is also demonstrated. Hence, the material developed hereby gathers in a unique 2D platform the phase‐change and ferroelectric switching properties, paving the way for the conception of innovative device architectures.https://doi.org/10.1002/advs.2023047852D ferroelectricsvan der Waalsmolecular beam epitaxyphase‐change materialsdensity functional theory calculations |
| spellingShingle | Stefano Cecchi Jamo Momand Daniele Dragoni Omar Abou El Kheir Federico Fagiani Dominik Kriegner Christian Rinaldi Fabrizio Arciprete Vaclav Holý Bart J. Kooi Marco Bernasconi Raffaella Calarco Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n Lamellae Advanced Science 2D ferroelectrics van der Waals molecular beam epitaxy phase‐change materials density functional theory calculations |
| title | Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n Lamellae |
| title_full | Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n Lamellae |
| title_fullStr | Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n Lamellae |
| title_full_unstemmed | Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n Lamellae |
| title_short | Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n Lamellae |
| title_sort | thick does the trick genesis of ferroelectricity in 2d gete rich gete m sb2te3 n lamellae |
| topic | 2D ferroelectrics van der Waals molecular beam epitaxy phase‐change materials density functional theory calculations |
| url | https://doi.org/10.1002/advs.202304785 |
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