Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiation
The Laser interaction with the semiconductor (si) is very important operations which are so important in Laser industrial applications. For this interaction the effected mechanical of induced diffusion which connected in this work of detectors during the optical properties for the semiconductor. Thi...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
University of Anbar
2008-06-01
|
| Series: | مجلة جامعة الانبار للعلوم الصرفة |
| Subjects: | |
| Online Access: | https://juaps.uoanbar.edu.iq/article_15321_05d4bd6790ecd4d7537c5a496094a775.pdf |
| _version_ | 1797373396622770176 |
|---|---|
| author | Abdul-Kareem H.Assaf Ibrahim J.Abdullah Maroof J. Rabee Asmat R.Abdulgaffor |
| author_facet | Abdul-Kareem H.Assaf Ibrahim J.Abdullah Maroof J. Rabee Asmat R.Abdulgaffor |
| author_sort | Abdul-Kareem H.Assaf |
| collection | DOAJ |
| description | The Laser interaction with the semiconductor (si) is very important operations which are so important in Laser industrial applications. For this interaction the effected mechanical of induced diffusion which connected in this work of detectors during the optical properties for the semiconductor. This study showed that the defects happening in single crystal of silicon kind-n. Irradiation by Laser Nd-YAG with wave length (1.06μm) and pulse duration (10ms) which conclude defects as (cracks, concaves, convexes and holes) forms and depending on radiation power where optical microscope was used for this purpose. The result of the diffraction of x-ray showed a phase change from single crystal to ( poly crystalline and amorphous) when using the radiation in period power (1.4kw , 0.75kw) consecutively. Also the surface resistance and the penetration depth were found proportional to increasing of the radiation power. |
| first_indexed | 2024-03-08T18:50:00Z |
| format | Article |
| id | doaj.art-6c4271b8526d4b62b01e075db58503bf |
| institution | Directory Open Access Journal |
| issn | 1991-8941 2706-6703 |
| language | English |
| last_indexed | 2024-03-08T18:50:00Z |
| publishDate | 2008-06-01 |
| publisher | University of Anbar |
| record_format | Article |
| series | مجلة جامعة الانبار للعلوم الصرفة |
| spelling | doaj.art-6c4271b8526d4b62b01e075db58503bf2023-12-28T21:52:42ZengUniversity of Anbarمجلة جامعة الانبار للعلوم الصرفة1991-89412706-67032008-06-012215916810.37652/juaps.2008.1532115321Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiationAbdul-Kareem H.Assaf0Ibrahim J.Abdullah1Maroof J. Rabee2Asmat R.Abdulgaffor3college of Science - Department of PhysicsCollege of Education - Department of Physicscollege of Science - Department of Physicscollege of Science - Department of PhysicsThe Laser interaction with the semiconductor (si) is very important operations which are so important in Laser industrial applications. For this interaction the effected mechanical of induced diffusion which connected in this work of detectors during the optical properties for the semiconductor. This study showed that the defects happening in single crystal of silicon kind-n. Irradiation by Laser Nd-YAG with wave length (1.06μm) and pulse duration (10ms) which conclude defects as (cracks, concaves, convexes and holes) forms and depending on radiation power where optical microscope was used for this purpose. The result of the diffraction of x-ray showed a phase change from single crystal to ( poly crystalline and amorphous) when using the radiation in period power (1.4kw , 0.75kw) consecutively. Also the surface resistance and the penetration depth were found proportional to increasing of the radiation power.https://juaps.uoanbar.edu.iq/article_15321_05d4bd6790ecd4d7537c5a496094a775.pdfyag |
| spellingShingle | Abdul-Kareem H.Assaf Ibrahim J.Abdullah Maroof J. Rabee Asmat R.Abdulgaffor Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiation مجلة جامعة الانبار للعلوم الصرفة yag |
| title | Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiation |
| title_full | Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiation |
| title_fullStr | Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiation |
| title_full_unstemmed | Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiation |
| title_short | Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiation |
| title_sort | study of induced defects for silicon single crystal by pulse lasernd yag irradiation |
| topic | yag |
| url | https://juaps.uoanbar.edu.iq/article_15321_05d4bd6790ecd4d7537c5a496094a775.pdf |
| work_keys_str_mv | AT abdulkareemhassaf studyofinduceddefectsforsiliconsinglecrystalbypulselaserndyagirradiation AT ibrahimjabdullah studyofinduceddefectsforsiliconsinglecrystalbypulselaserndyagirradiation AT maroofjrabee studyofinduceddefectsforsiliconsinglecrystalbypulselaserndyagirradiation AT asmatrabdulgaffor studyofinduceddefectsforsiliconsinglecrystalbypulselaserndyagirradiation |