Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
<p>Abstract</p> <p>Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magneti...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/102 |
| Summary: | <p>Abstract</p> <p>Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field <it>B</it>. Also, phenomena of localization effects can be seen at low <it>B</it>. By analyzing the zero-field resistivity as a function of temperature <it>T</it>, we show the importance of surface scattering in such a nanoscale film.</p> |
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| ISSN: | 1931-7573 1556-276X |