The electrical- and magneto-transport properties of Rb-, Sn-, and Co-doped BiCuSeO crystals
Doped BiCuSeO is one of the promising thermoelectric oxide candidates. However, the research on doping effects on the electrical transport properties of BiCuSeO, especially in crystalline samples, is still limited. Here, we studied the transport properties of doped BiCuSeO crystals, including three...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2021-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0059322 |
| _version_ | 1830429250465824768 |
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| author | Shuang Han Cheng-Hao Yin Yang-Yang Lv Hao-Min Lu Ye-Cheng Luo Lu Xu Shu-Hua Yao Jian Zhou Y. B. Chen |
| author_facet | Shuang Han Cheng-Hao Yin Yang-Yang Lv Hao-Min Lu Ye-Cheng Luo Lu Xu Shu-Hua Yao Jian Zhou Y. B. Chen |
| author_sort | Shuang Han |
| collection | DOAJ |
| description | Doped BiCuSeO is one of the promising thermoelectric oxide candidates. However, the research on doping effects on the electrical transport properties of BiCuSeO, especially in crystalline samples, is still limited. Here, we studied the transport properties of doped BiCuSeO crystals, including three types of doping species (Rb, Sn, and Co) with varying concentrations. In the case of Rb-doped BiCuSeO crystals, few percentage (≤1%) Rb-doping make BiCuSeO display metallic behavior, while high one (≥2%) displays bad-metallic behavior. Both Sn- and Co-doped BiCuSeO crystals have similar electrical evolution as Rb-doped ones. The charge carriers of all these doped BiCuSeO crystals are holes, and the increased dopant concentration decreases the hole concentrations regardless of the type of dopant species. There is negative magnetoresistance (MR) in Rb- and Sn-doped BiCuSeO at low temperature (<15 K), which is due to the breakdown of weak localization by magnetic field B, but the MR behaviors in Co-doped BiCuSeO crystals are strongly correlated with their magnetic properties. The analysis of the temperature-dependent mobility of these doped BiCuSeO crystals substantiates that at low temperatures (<50 K), electron-impurity scattering dominates, while electron–phonon scattering dominates at high temperatures (>50 K). The evolution of the above-mentioned electrical/magneto-transport properties of doped BiCuSeO can be understood as follows: the dopant compensates the Bi-deficiency in pristine BiCuSeO crystals and decreases the hole concentration and leads to the metal–Anderson-insulator transition. These results may be valuable to optimize the electrical properties of layered compounds similar to BiCuSeO. |
| first_indexed | 2024-12-21T01:28:17Z |
| format | Article |
| id | doaj.art-6c791460d8074596a8392ec5707c1d85 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T01:28:17Z |
| publishDate | 2021-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-6c791460d8074596a8392ec5707c1d852022-12-21T19:20:26ZengAIP Publishing LLCAIP Advances2158-32262021-10-011110105207105207-1110.1063/5.0059322The electrical- and magneto-transport properties of Rb-, Sn-, and Co-doped BiCuSeO crystalsShuang Han0Cheng-Hao Yin1Yang-Yang Lv2Hao-Min Lu3Ye-Cheng Luo4Lu Xu5Shu-Hua Yao6Jian Zhou7Y. B. Chen8National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, ChinaDoped BiCuSeO is one of the promising thermoelectric oxide candidates. However, the research on doping effects on the electrical transport properties of BiCuSeO, especially in crystalline samples, is still limited. Here, we studied the transport properties of doped BiCuSeO crystals, including three types of doping species (Rb, Sn, and Co) with varying concentrations. In the case of Rb-doped BiCuSeO crystals, few percentage (≤1%) Rb-doping make BiCuSeO display metallic behavior, while high one (≥2%) displays bad-metallic behavior. Both Sn- and Co-doped BiCuSeO crystals have similar electrical evolution as Rb-doped ones. The charge carriers of all these doped BiCuSeO crystals are holes, and the increased dopant concentration decreases the hole concentrations regardless of the type of dopant species. There is negative magnetoresistance (MR) in Rb- and Sn-doped BiCuSeO at low temperature (<15 K), which is due to the breakdown of weak localization by magnetic field B, but the MR behaviors in Co-doped BiCuSeO crystals are strongly correlated with their magnetic properties. The analysis of the temperature-dependent mobility of these doped BiCuSeO crystals substantiates that at low temperatures (<50 K), electron-impurity scattering dominates, while electron–phonon scattering dominates at high temperatures (>50 K). The evolution of the above-mentioned electrical/magneto-transport properties of doped BiCuSeO can be understood as follows: the dopant compensates the Bi-deficiency in pristine BiCuSeO crystals and decreases the hole concentration and leads to the metal–Anderson-insulator transition. These results may be valuable to optimize the electrical properties of layered compounds similar to BiCuSeO.http://dx.doi.org/10.1063/5.0059322 |
| spellingShingle | Shuang Han Cheng-Hao Yin Yang-Yang Lv Hao-Min Lu Ye-Cheng Luo Lu Xu Shu-Hua Yao Jian Zhou Y. B. Chen The electrical- and magneto-transport properties of Rb-, Sn-, and Co-doped BiCuSeO crystals AIP Advances |
| title | The electrical- and magneto-transport properties of Rb-, Sn-, and Co-doped BiCuSeO crystals |
| title_full | The electrical- and magneto-transport properties of Rb-, Sn-, and Co-doped BiCuSeO crystals |
| title_fullStr | The electrical- and magneto-transport properties of Rb-, Sn-, and Co-doped BiCuSeO crystals |
| title_full_unstemmed | The electrical- and magneto-transport properties of Rb-, Sn-, and Co-doped BiCuSeO crystals |
| title_short | The electrical- and magneto-transport properties of Rb-, Sn-, and Co-doped BiCuSeO crystals |
| title_sort | electrical and magneto transport properties of rb sn and co doped bicuseo crystals |
| url | http://dx.doi.org/10.1063/5.0059322 |
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