Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering
We report a comprehensive study on influence of oxygen partial pressure on NiO thin films grown on glass substrates in a combined argon and oxygen ambience by reactive dc magnetron sputtering. In this present article, we have discussed the dependence of oxygen pressure on structural, chemical, morph...
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IOP Publishing
2020-01-01
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Online Access: | https://doi.org/10.1088/2053-1591/ab69c5 |
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author | Parashurama Salunkhe Muhammed Ali A V Dhananjaya Kekuda |
author_facet | Parashurama Salunkhe Muhammed Ali A V Dhananjaya Kekuda |
author_sort | Parashurama Salunkhe |
collection | DOAJ |
description | We report a comprehensive study on influence of oxygen partial pressure on NiO thin films grown on glass substrates in a combined argon and oxygen ambience by reactive dc magnetron sputtering. In this present article, we have discussed the dependence of oxygen pressure on structural, chemical, morphological, optical and electrical properties of the sputtered NiO films. Glancing angle x-ray diffraction reveals that the deposited films were polycrystalline in nature with FCC phase. The preferred orientation changes from (200) to (111) in a higher O _2 flow rate environment and an average particle size was estimated using Scherrer relation. The surface morphology of films was studied by using atomic force microscopy. The x-ray photoelectron spectroscopy analysis demonstrates the core level Ni 2p spectra over a range of 850 eV to 885 eV of binding energy and observed Ni 2p _3/2 , Ni 2p _1/2 domains along with their satellite peaks. It infers the presence of both Ni ^+2 and Ni ^+3 oxidation states in the sputtered films. Additionally, Raman spectroscopy was carried out to confirm the structural defects level and crystalline nature of the films. The optical results show that deposited films were semi-transparent and the evaluated optical band gap of the material lies in the range 3.36 eV to 3.52 eV. The extracted electrical properties infer either n-type or p-type conductivity depending on the processing conditions of the films. |
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spelling | doaj.art-6c7c84aecc0e4a2982639df1b28897322023-08-09T15:28:52ZengIOP PublishingMaterials Research Express2053-15912020-01-017101642710.1088/2053-1591/ab69c5Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputteringParashurama Salunkhe0https://orcid.org/0000-0002-0456-9689Muhammed Ali A V1Dhananjaya Kekuda2https://orcid.org/0000-0003-4041-0138Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, IndiaDepartment of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, IndiaDepartment of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, IndiaWe report a comprehensive study on influence of oxygen partial pressure on NiO thin films grown on glass substrates in a combined argon and oxygen ambience by reactive dc magnetron sputtering. In this present article, we have discussed the dependence of oxygen pressure on structural, chemical, morphological, optical and electrical properties of the sputtered NiO films. Glancing angle x-ray diffraction reveals that the deposited films were polycrystalline in nature with FCC phase. The preferred orientation changes from (200) to (111) in a higher O _2 flow rate environment and an average particle size was estimated using Scherrer relation. The surface morphology of films was studied by using atomic force microscopy. The x-ray photoelectron spectroscopy analysis demonstrates the core level Ni 2p spectra over a range of 850 eV to 885 eV of binding energy and observed Ni 2p _3/2 , Ni 2p _1/2 domains along with their satellite peaks. It infers the presence of both Ni ^+2 and Ni ^+3 oxidation states in the sputtered films. Additionally, Raman spectroscopy was carried out to confirm the structural defects level and crystalline nature of the films. The optical results show that deposited films were semi-transparent and the evaluated optical band gap of the material lies in the range 3.36 eV to 3.52 eV. The extracted electrical properties infer either n-type or p-type conductivity depending on the processing conditions of the films.https://doi.org/10.1088/2053-1591/ab69c5electrical conductivityoxygen flow rateNiO thin filmsX-ray photoelectron spectroscopychemical state quantification |
spellingShingle | Parashurama Salunkhe Muhammed Ali A V Dhananjaya Kekuda Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering Materials Research Express electrical conductivity oxygen flow rate NiO thin films X-ray photoelectron spectroscopy chemical state quantification |
title | Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering |
title_full | Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering |
title_fullStr | Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering |
title_full_unstemmed | Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering |
title_short | Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering |
title_sort | investigation on tailoring physical properties of nickel oxide thin films grown by dc magnetron sputtering |
topic | electrical conductivity oxygen flow rate NiO thin films X-ray photoelectron spectroscopy chemical state quantification |
url | https://doi.org/10.1088/2053-1591/ab69c5 |
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