Influence of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells
In recent years, polycrystalline passivated emitter and rear cell (PERC) solar cells have developed rapidly, but less research has been conducted on the preparation process of their rear side passivation layers on standard solar cell production lines. In this work, a Al<sub>2</sub>O<s...
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MDPI AG
2023-10-01
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author | Weitao Fan Honglie Shen Biao Liu Lei Zhao Xin Zhang Hong Pan |
author_facet | Weitao Fan Honglie Shen Biao Liu Lei Zhao Xin Zhang Hong Pan |
author_sort | Weitao Fan |
collection | DOAJ |
description | In recent years, polycrystalline passivated emitter and rear cell (PERC) solar cells have developed rapidly, but less research has been conducted on the preparation process of their rear side passivation layers on standard solar cell production lines. In this work, a Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> rear side stacked passivation layer for polycrystalline PERC solar cells was prepared using the plasma- enhanced chemical vapor deposition (PECVD) method. The effects of different Al<sub>2</sub>O<sub>3</sub> layer thicknesses (6.8~25.6 nm), SiN<sub>x</sub> layer thicknesses (65~150 nm) and SiN<sub>x</sub> refractive indices (2.0~2.2) on the passivation effect and electrical performance were systematically investigated, which were adjusted by TMA flow rate, conveyor belt speed and the flow ratio of SiH<sub>4</sub> and NH<sub>3</sub>, respectively. In addition, external quantum efficiency (EQE) and elevated temperature-induced degradation experiments were also carried out to check the cell performance. The results showed that the best passivation effect was achieved at 10.8 nm Al<sub>2</sub>O<sub>3</sub> layer, 120 nm SiN<sub>x</sub> layer and 2.2 SiN<sub>x</sub> layer refractive index. Under the optimal conditions mentioned above, the highest efficiency was 19.20%, corresponding V<sub>oc</sub> was 647 mV, I<sub>sc</sub> was 9.21 A and FF was 79.18%. Meanwhile, when the refraction index was 2.2, the EQE of the cell in the long-wavelength band (800–1000 nm) was improved. Moreover, the decrease in conversion efficiency after 45 h LeTID was around 0.55% under the different refraction indices. The above results can provide a reference for the industrial production of polycrystalline PERC solar cells. |
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spelling | doaj.art-6c9ce9dde2b34f22b4211a039ba381892023-11-19T14:21:19ZengMDPI AGEnergies1996-10732023-10-011619696310.3390/en16196963Influence of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar CellsWeitao Fan0Honglie Shen1Biao Liu2Lei Zhao3Xin Zhang4Hong Pan5Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, ChinaJiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, ChinaJiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, ChinaJiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, ChinaYcergy (Suzhou) Technology Co., Ltd., Suzhou 215121, ChinaYcergy (Suzhou) Technology Co., Ltd., Suzhou 215121, ChinaIn recent years, polycrystalline passivated emitter and rear cell (PERC) solar cells have developed rapidly, but less research has been conducted on the preparation process of their rear side passivation layers on standard solar cell production lines. In this work, a Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> rear side stacked passivation layer for polycrystalline PERC solar cells was prepared using the plasma- enhanced chemical vapor deposition (PECVD) method. The effects of different Al<sub>2</sub>O<sub>3</sub> layer thicknesses (6.8~25.6 nm), SiN<sub>x</sub> layer thicknesses (65~150 nm) and SiN<sub>x</sub> refractive indices (2.0~2.2) on the passivation effect and electrical performance were systematically investigated, which were adjusted by TMA flow rate, conveyor belt speed and the flow ratio of SiH<sub>4</sub> and NH<sub>3</sub>, respectively. In addition, external quantum efficiency (EQE) and elevated temperature-induced degradation experiments were also carried out to check the cell performance. The results showed that the best passivation effect was achieved at 10.8 nm Al<sub>2</sub>O<sub>3</sub> layer, 120 nm SiN<sub>x</sub> layer and 2.2 SiN<sub>x</sub> layer refractive index. Under the optimal conditions mentioned above, the highest efficiency was 19.20%, corresponding V<sub>oc</sub> was 647 mV, I<sub>sc</sub> was 9.21 A and FF was 79.18%. Meanwhile, when the refraction index was 2.2, the EQE of the cell in the long-wavelength band (800–1000 nm) was improved. Moreover, the decrease in conversion efficiency after 45 h LeTID was around 0.55% under the different refraction indices. The above results can provide a reference for the industrial production of polycrystalline PERC solar cells.https://www.mdpi.com/1996-1073/16/19/6963rear-side passivationpolycrystalline PERC solar cellstandard solar cell production lineminority carrier lifetimeelectrical performance parameters |
spellingShingle | Weitao Fan Honglie Shen Biao Liu Lei Zhao Xin Zhang Hong Pan Influence of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells Energies rear-side passivation polycrystalline PERC solar cell standard solar cell production line minority carrier lifetime electrical performance parameters |
title | Influence of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells |
title_full | Influence of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells |
title_fullStr | Influence of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells |
title_full_unstemmed | Influence of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells |
title_short | Influence of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells |
title_sort | influence of al sub 2 sub o sub 3 sub sin sub x sub rear side stacked passivation on the performance of polycrystalline perc solar cells |
topic | rear-side passivation polycrystalline PERC solar cell standard solar cell production line minority carrier lifetime electrical performance parameters |
url | https://www.mdpi.com/1996-1073/16/19/6963 |
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