Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band
Micro-coaxial probe technique (MCPT) is widely used in three-dimensional electromagnetic (3-D EM) modeling of planar Schottky barrier diodes (SBDs) for the design of terahertz multipliers and mixers. However, the inconsistency of port numbers between 3-D EM model and intrinsic model of diode has bee...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8998176/ |
| _version_ | 1818874556269461504 |
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| author | Chengkai Wu Yong Zhang Yuehang Xu Yan Bo Ruimin Xu |
| author_facet | Chengkai Wu Yong Zhang Yuehang Xu Yan Bo Ruimin Xu |
| author_sort | Chengkai Wu |
| collection | DOAJ |
| description | Micro-coaxial probe technique (MCPT) is widely used in three-dimensional electromagnetic (3-D EM) modeling of planar Schottky barrier diodes (SBDs) for the design of terahertz multipliers and mixers. However, the inconsistency of port numbers between 3-D EM model and intrinsic model of diode has been pended for years due to the lack of alternative internal port techniques. In this paper, after investigating port techniques available for field simulation software, a novel dual lumped ports technique (DLPT) is proposed to replace the MCPT for removing its non-physical grounding requirement, which makes the defined internal ports have definite physical meaning. Moreover, the proposed DLPT possesses higher accuracy than MCPT for the elimination of epitaxial layer penetration and additional consideration of port coupling effect. Detail technical procedures for DLPT are presented for internal double ports implementation. To verify its feasibility and accuracy at terahertz band, a 110 GHz broadband tripler was designed utilizing the proposed DLPT and the measured results agree well with the simulated ones. Furthermore, a series of frequency multipliers designed by MCPT are post-analyzed with the same models derived from DLPT. Finally, a slight discrepancy is observed between MCPT and DLPT, and the latter coincides better with the measured results. All these results indicate that the proposed DLPT is validated to be effective and accurate for the design of diode frequency multipliers and mixers in terahertz region. |
| first_indexed | 2024-12-19T13:12:29Z |
| format | Article |
| id | doaj.art-6ca8272785e444778d629c823d924140 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-19T13:12:29Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-6ca8272785e444778d629c823d9241402022-12-21T20:19:54ZengIEEEIEEE Access2169-35362020-01-018380013800910.1109/ACCESS.2020.29738048998176Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz BandChengkai Wu0https://orcid.org/0000-0002-4737-0696Yong Zhang1https://orcid.org/0000-0003-4768-4780Yuehang Xu2https://orcid.org/0000-0003-1706-2681Yan Bo3Ruimin Xu4School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, ChinaMicro-coaxial probe technique (MCPT) is widely used in three-dimensional electromagnetic (3-D EM) modeling of planar Schottky barrier diodes (SBDs) for the design of terahertz multipliers and mixers. However, the inconsistency of port numbers between 3-D EM model and intrinsic model of diode has been pended for years due to the lack of alternative internal port techniques. In this paper, after investigating port techniques available for field simulation software, a novel dual lumped ports technique (DLPT) is proposed to replace the MCPT for removing its non-physical grounding requirement, which makes the defined internal ports have definite physical meaning. Moreover, the proposed DLPT possesses higher accuracy than MCPT for the elimination of epitaxial layer penetration and additional consideration of port coupling effect. Detail technical procedures for DLPT are presented for internal double ports implementation. To verify its feasibility and accuracy at terahertz band, a 110 GHz broadband tripler was designed utilizing the proposed DLPT and the measured results agree well with the simulated ones. Furthermore, a series of frequency multipliers designed by MCPT are post-analyzed with the same models derived from DLPT. Finally, a slight discrepancy is observed between MCPT and DLPT, and the latter coincides better with the measured results. All these results indicate that the proposed DLPT is validated to be effective and accurate for the design of diode frequency multipliers and mixers in terahertz region.https://ieeexplore.ieee.org/document/8998176/Micro-coaxial probe techniquedual lumped ports technique3-D EM modelschottky barrier diodediode modelingfrequency multipliers |
| spellingShingle | Chengkai Wu Yong Zhang Yuehang Xu Yan Bo Ruimin Xu Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band IEEE Access Micro-coaxial probe technique dual lumped ports technique 3-D EM model schottky barrier diode diode modeling frequency multipliers |
| title | Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band |
| title_full | Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band |
| title_fullStr | Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band |
| title_full_unstemmed | Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band |
| title_short | Dual Lumped Ports Technique and Its Applications in Modeling of Planar Schottky Diode in THz Band |
| title_sort | dual lumped ports technique and its applications in modeling of planar schottky diode in thz band |
| topic | Micro-coaxial probe technique dual lumped ports technique 3-D EM model schottky barrier diode diode modeling frequency multipliers |
| url | https://ieeexplore.ieee.org/document/8998176/ |
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