Integrated SiGe Detectors for Si Photonic Sensor Platforms
In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low...
| Autors principals: | , , , , , |
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| Format: | Article |
| Idioma: | English |
| Publicat: |
MDPI AG
2017-08-01
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| Col·lecció: | Proceedings |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2504-3900/1/4/559 |
| Sumari: | In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography. |
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| ISSN: | 2504-3900 |